{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STPSC10H12G2Y-TR","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STPSC10H12G2Y-TR","canonicalUrl":"https://icboms.com/stmicroelectronics/STPSC10H12G2Y-TR","factsUrl":"https://icboms.com/api/mcp/products/STPSC10H12G2Y-TR","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STPSC10H12G2Y-TR, Automotive AEC-Q101 SiC Schottky diode, 1200 V reverse voltage, 10 A average rectified current, zero reverse recovery time, D2PAK HV surface-mount package, -40°C to 175°C junction temperature.","salesMarkdown":"## 1.2 kV SiC Schottky — the switching-loss eliminator The STPSC10H12G2Y-TR is an STMicroelectronics silicon-carbide Schottky diode rated for 1200 V reverse voltage and 10 A average rectified current. ## Automotive qualification and junction temperature The 175°C Tj max allows the die to run hot without derating the blocking voltage, but the forward voltage drop of 1.5 V at 10 A still generates conduction loss that must be sunk through the D2PAK HV package's exposed tab.","metaTitle":"STPSC10H12G2Y-TR SiC Schottky Diode, 1.2 kV, 10 A, AEC-Q101","metaDescription":"STMicroelectronics STPSC10H12G2Y-TR SiC Schottky diode, 1200 V reverse voltage, 10 A average rectified current, zero trr, AEC-Q101 automotive qualified.","metaKeywords":null},"attributes":{"series":"Automotive, AEC-Q101, ECOPACK®2","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Grade":"Automotive","Speed":"No Recovery Time > 500mA (Io)","Series":"ECOPACK®2","Packaging":"Tape & Reel (TR) Cut Tape (CT)","Technology":"SiC (Silicon Carbide) Schottky","Part Status":"Active","Mounting Type":"Surface Mount","Qualification":"AEC-Q101","Package / Case":"TO-263-3, D2PAK (2 Leads + Tab), TO-263AB","lifecycle_stage":"eol_hot","Capacitance @ Vr, F":"725pF @ 0V, 1MHz","Supplier Device Package":"D2PAK HV","Reverse Recovery Time (trr)":"0 ns","Current - Reverse Leakage @ Vr":"60 µA @ 1200 V","Voltage - DC Reverse (Vr) (Max)":"1200 V","Current - Average Rectified (Io)":"10A","Operating Temperature - Junction":"-40°C ~ 175°C","Voltage - Forward (Vf) (Max) @ If":"1.5 V @ 10 A"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$5.5900","priceTiers":[{"qty":1,"price":"$6.56000","currency":"USD"},{"qty":10,"price":"$5.93000","currency":"USD"},{"qty":100,"price":"$4.90980","currency":"USD"},{"qty":500,"price":"$4.55384","currency":"USD"},{"qty":1000,"price":"$4.55385","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/67f5a9b90cdf9b17a11fe6b21e65180f.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STPSC10H12G2Y-TR/alternatives.json"},"ai":{"faq":[{"question":"Is STPSC10H12G2Y-TR automotive qualified?","answer":"Yes, it carries AEC-Q101 qualification and is listed with an Automotive grade, making it suitable for automotive power train and battery management applications."},{"question":"What is the reverse recovery time of STPSC10H12G2Y-TR?","answer":"Zero nanoseconds. As a SiC Schottky diode, it has no minority carrier storage, so there is no reverse recovery charge to dissipate. This eliminates turn-off losses in hard-switched topologies like PFC boost or DC-DC converters."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STPSC10H12G2Y-TR","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STPSC10H12G2Y-TR when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}