{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STPSC10H12B2-TR","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STPSC10H12B2-TR","canonicalUrl":"https://icboms.com/stmicroelectronics/STPSC10H12B2-TR","factsUrl":"https://icboms.com/api/mcp/products/STPSC10H12B2-TR","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics ECOPACK®2 SiC Schottky Diode, STPSC10H12B2-TR, 1200 V Vr, 10 A Io, 0 ns trr, 1.5 V Vf @ 10 A, DPAK HV, -40 to 175 °C junction.","salesMarkdown":"## 1200 V / 10 A SiC Schottky — the switching-loss killer The STPSC10H12B2-TR is a 1200 V, 10 A silicon carbide Schottky diode from STMicroelectronics, housed in a DPAK HV surface-mount package. Its defining characteristic is zero reverse recovery time — the SiC Schottky barrier eliminates the stored-charge tail that plagues silicon ultrafast diodes, so turn-off losses are essentially capacitive only. This makes it the right fit for hard-switched topologies running above 100 kHz where silicon recovery losses would dominate the thermal budget. The datasheet lists reverse recovery time as 0 ns, and the part carries a \"No Recovery Time > 500 mA (Io)\" speed classification. In a continuous-conduction-mode PFC stage, a silicon ultrafast diode might dissipate several watts in recovery losses alone at 200 kHz; this SiC part drops that term to near zero. The remaining loss is conduction (Vf × Iavg) and the capacitive discharge from the junction capacitance, which is 725 pF at 0 V bias. That capacitance figure matters for the snubber design — it sets the minimum RC damping needed to suppress ringing at the switch node. ## 175 °C junction — thermal headroom in tight enclosures The 175 °C max allows the diode to run hotter than a typical 150 °C silicon part, which translates to a smaller heatsink or higher output power in a given thermal envelope. Reverse leakage at rated voltage is 60 µA at 1200 V, typical for SiC technology; note that leakage rises exponentially with temperature, so at 175 °C junction the standby loss contribution must be checked against the application's no-load spec. ST lists the product status as Active. The part is also available in Cut Tape for prototyping. ## Package and footprint — DPAK HV The package is TO-252-3 (DPak, 2 leads plus tab), specifically the DPAK HV variant. The package is rated for the full 175 °C junction temperature, so the solder joint must use a high-temperature alloy if the tab runs above 150 °C.","metaTitle":"STPSC10H12B2-TR SiC Schottky Diode, 1200 V, 10 A, DPAK","metaDescription":"STMicroelectronics STPSC10H12B2-TR silicon carbide Schottky diode, 1200 V reverse, 10 A average, zero reverse recovery. Active lifecycle. DPAK HV package.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Speed":"No Recovery Time > 500mA (Io)","Series":"ECOPACK®2","Package":"Tape & Reel (TR); Cut Tape (CT)","Diode Type":"Silicon Carbide Schottky","Mounting Type":"Surface Mount","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Product Status":"Active","lifecycle_stage":"eol_hot","Base Product Number":"STPSC10","Capacitance @ Vr, F":"725pF @ 0V, 1MHz","Supplier Device Package":"DPAK HV","Reverse Recovery Time (trr)":"0 ns","Current - Reverse Leakage @ Vr":"60 µA @ 1200 V","Voltage - DC Reverse (Vr) (Max)":"1200 V","Current - Average Rectified (Io)":"10A","Operating Temperature - Junction":"-40°C~175°C","Voltage - Forward (Vf) (Max) @ If":"1.5 V @ 10 A"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$6.3000","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/15c26979a1a7dac8078afd8c5c319336.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STPSC10H12B2-TR/alternatives.json"},"ai":{"faq":[{"question":"What is the difference between STPSC10H12B2-TR and STPSC10H12D?","answer":"Both are 1200 V, 10 A SiC Schottky diodes from the same STPSC10H12 base product. The difference is the package: the -TR suffix denotes DPAK HV in Tape & Reel, while the -D suffix typically indicates a different package variant (often D²PAK or TO-220). The die and electrical ratings are the same; the choice is driven by board area, thermal management, and assembly process."},{"question":"Is STPSC10H12B2-TR RoHS compliant?","answer":"The part is listed under the ECOPACK®2 series, which is ST's designation for RoHS-compliant, halogen-free packages. No additional RoHS certificate is required for standard procurement."},{"question":"What is STPSC10H12B2-TR's listed speed classification?","answer":"The speed is classified as \"No Recovery Time > 500 mA (Io)\". This means the reverse recovery time is effectively zero — the datasheet lists trr as 0 ns — which is the hallmark of a SiC Schottky barrier diode. There is no stored charge to sweep out at turn-off."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STPSC10H12B2-TR","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STPSC10H12B2-TR when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}