{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STPSC10H065GY-TR","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STPSC10H065GY-TR","canonicalUrl":"https://icboms.com/stmicroelectronics/STPSC10H065GY-TR","factsUrl":"https://icboms.com/api/mcp/products/STPSC10H065GY-TR","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STPSC10H065GY-TR silicon carbide Schottky diode, 650 V DC reverse voltage, 10 A average rectified current, 0 ns reverse recovery time, AEC-Q101 qualified, D²PAK (TO-263AB) surface mount package, -40°C to 175°C junction temperature.","salesMarkdown":"## SiC Schottky — zero-recovery switching for automotive power stages The STPSC10H065GY-TR is a silicon carbide Schottky diode from STMicroelectronics, rated for 650 V reverse voltage and 10 A average forward current. This eliminates the reverse recovery loss component entirely, which is the dominant switching loss mechanism in standard ultrafast silicon diodes. For a PFC boost stage or LLC secondary rectifier running at 100 kHz or higher, removing that loss can cut total diode dissipation by half compared to a silicon FRED of the same voltage class. ## Forward drop and leakage — the thermal budget drivers Maximum forward voltage is 1.75 V at 10 A and 25 °C junction. That 17.5 W peak conduction loss at rated current is the primary heat source — the 0 ns switching loss adds negligible thermal burden, so the heatsink sizing is essentially Vf × Iavg. Reverse leakage is 100 µA at 650 V, junction temperature unspecified in the max rating. SiC leakage rises more slowly with temperature than silicon, but at 175 °C junction the leakage current can multiply several times — still typically below 1 mA, which is manageable for the bias network in a PFC controller. Capacitance at zero bias is 480 pF at 1 MHz. This is the output capacitance the MOSFET or IGBT sees as the diode commutates — a 480 pF Coss adds about 24 nC of charge per switching cycle at 400 V bus, which the driver must supply. That figure is in line with other SiC 10 A / 650 V parts. ## D²PAK footprint — thermal and mechanical fit The diode is housed in a D²PAK (TO-263AB) surface-mount package with the anode on the two leads and the cathode on the exposed tab. A 2 oz copper pour of at least 600 mm² on the top layer is typical for 10 A continuous operation in still air. Standard MSL for this package family is MSL-3, so a 24-hour bake at 125 °C is required before reflow if the moisture barrier bag has been opened for more than the floor-life period.","metaTitle":"STPSC10H065GY-TR SiC Schottky Diode, 650V 10A, AEC-Q101","metaDescription":"STMicroelectronics STPSC10H065GY-TR silicon carbide Schottky diode, 650V 10A, zero recovery time, AEC-Q101 qualified, D²PAK surface mount.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Speed":"No Recovery Time > 500mA (Io)","Series":"Automotive, AEC-Q101","Package":"Tape & Reel (TR); Cut Tape (CT)","Diode Type":"Silicon Carbide Schottky","Mounting Type":"Surface Mount","Package / Case":"TO-263-3, D²Pak (2 Leads + Tab), TO-263AB","Product Status":"Active","lifecycle_stage":"eol_hot","Base Product Number":"STPSC10","Capacitance @ Vr, F":"480pF @ 0V, 1MHz","Supplier Device Package":"D²PAK","Reverse Recovery Time (trr)":"0 ns","Current - Reverse Leakage @ Vr":"100 µA @ 650 V","Voltage - DC Reverse (Vr) (Max)":"650 V","Current - Average Rectified (Io)":"10A","Operating Temperature - Junction":"-40°C~175°C","Voltage - Forward (Vf) (Max) @ If":"1.75 V @ 10 A"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$3.9500","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/86564f4075ecf15e3da1f5380f2aeda2.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STPSC10H065GY-TR/alternatives.json"},"ai":{"faq":[{"question":"Is STPSC10H065GY-TR automotive qualified?","answer":"Yes, the STPSC10H065GY-TR is AEC-Q101 qualified, which means it has passed the automotive-grade stress tests for temperature cycling, high-temperature reverse bias, and humidity. The junction temperature rating of -40 °C to 175 °C covers under-hood and EV powertrain thermal profiles."},{"question":"What is the closest pin-compatible alternative to STPSC10H065GY-TR?","answer":"Direct alternatives in the same 650 V / 10 A SiC Schottky class include parts from Wolfspeed (C3D10065E in TO-252) and ROHM (SCS210KG in TO-263). All share the D²PAK footprint and similar Vf and capacitance specs. The AEC-Q101 qualification on the ST part is the differentiator for automotive BOMs — confirm the peer's automotive grade before substituting."},{"question":"What is STPSC10H065GY-TR's listed speed?","answer":"The part is listed with a speed specification of No Recovery Time > 500 mA (Io). This means the diode exhibits zero reverse recovery time when switching from a forward current of 500 mA or higher — the SiC Schottky barrier has no minority carrier storage, so trr is effectively 0 ns across the full current range."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STPSC10H065GY-TR","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STPSC10H065GY-TR when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}