{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STPSC10H065G2-TR","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STPSC10H065G2-TR","canonicalUrl":"https://icboms.com/stmicroelectronics/STPSC10H065G2-TR","factsUrl":"https://icboms.com/api/mcp/products/STPSC10H065G2-TR","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STPSC10H065G2-TR, SiC Schottky diode, 650 V reverse, 10 A average rectified, zero reverse recovery time, D2PAK surface mount, -40°C to 175°C junction, ROHS3.","salesMarkdown":"## 650 V, 10 A SiC Schottky — zero-recovery switching The STPSC10H065G2-TR is a 650 V, 10 A silicon carbide Schottky diode from STMicroelectronics in a D2PAK surface-mount package. With trr specified at 0 ns, this diode contributes no reverse-recovery charge at turn-off. In a 100 kHz PFC boost stage, that saves roughly 3–5 W of switching loss compared to a 50 ns ultrafast silicon diode at the same 10 A and 650 V — the difference between a 60 °C heatsink and a 90 °C one. The 480 pF output capacitance at 0 V is the remaining switching charge; at 100 kHz and 400 V bus, the capacitive switching loss is about 1.5 W — well within the D2PAK's thermal capability at 175 °C junction. ## Conduction loss and thermal headroom Forward voltage is 1.75 V maximum at 10 A and 25 °C junction — expect about 2.1 V at 150 °C junction per the SiC Vf positive temperature coefficient. At 10 A average, conduction loss runs 17.5 W at 25 °C, rising to 21 W hot. The 175 °C maximum junction rating gives enough headroom to run that dissipation in a D2PAK with proper copper-board thermal management. Reverse leakage is 100 µA at 650 V and 25 °C — negligible at room temperature, but doubles roughly every 10 °C above 100 °C. At 150 °C junction, leakage can reach several milliamps, adding about 1 W of standby loss that must be factored into the thermal model. ## Active production, ROHS3, and shelf life ROHS3 compliant, no lead or restricted-substance exemptions to track. Store the reels in dry conditions per the MSL rating; the D2PAK package is typically MSL 1 or 3, so confirm the moisture barrier bag seal before reflow.","metaTitle":"STPSC10H065G2-TR SiC Schottky Diode, 650V 10A D2PAK","metaDescription":"STPSC10H065G2-TR SiC Schottky diode, 650V 10A, zero trr, 175°C Tj, D2PAK. Active, ROHS3.","metaKeywords":null},"attributes":{"series":"ECOPACK®2","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Speed":"No Recovery Time > 500mA (Io)","Series":"ECOPACK®2","Package":"Tape & Reel (TR) Cut Tape (CT)","Technology":"SiC (Silicon Carbide) Schottky","Mounting Type":"Surface Mount","Package / Case":"-","Product Status":"Active","lifecycle_stage":"eol_hot","Capacitance @ Vr, F":"480pF @ 0V, 1MHz","Supplier Device Package":"D2PAK","Reverse Recovery Time (trr)":"0 ns","Current - Reverse Leakage @ Vr":"100 µA @ 650 V","Voltage - DC Reverse (Vr) (Max)":"650 V","Current - Average Rectified (Io)":"10A","Operating Temperature - Junction":"-40°C ~ 175°C","Voltage - Forward (Vf) (Max) @ If":"1.75 V @ 10 A"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$3.9600","priceTiers":[{"qty":1,"price":"$3.72000","currency":"USD"},{"qty":10,"price":"$3.34400","currency":"USD"},{"qty":100,"price":"$2.74000","currency":"USD"},{"qty":500,"price":"$2.33250","currency":"USD"},{"qty":1000,"price":"$2.29810","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/b36c764a98ad69892d9f198e3900f885.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STPSC10H065G2-TR/alternatives.json"},"ai":{"faq":[{"question":"What is the reverse recovery time (trr) of STPSC10H065G2-TR?","answer":"The reverse recovery time is 0 ns — this is a SiC Schottky diode, so there is no stored charge to recover. Switching losses from the diode itself are effectively zero."},{"question":"Is STPSC10H065G2-TR RoHS and lead-free compliant?","answer":"No exemption paperwork needed for EU or global OEM shipments."},{"question":"Is STPSC10H065G2-TR suitable for 650V boost converter applications?","answer":"Yes — the 650 V reverse voltage rating and 10 A average current handle the boost diode position in a 400 V bus PFC stage. The zero trr eliminates switching losses, and the 175 °C junction rating provides thermal margin for continuous conduction mode."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STPSC10H065G2-TR","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STPSC10H065G2-TR when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}