{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STPSC1006G-TR","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STPSC1006G-TR","canonicalUrl":"https://icboms.com/stmicroelectronics/STPSC1006G-TR","factsUrl":"https://icboms.com/api/mcp/products/STPSC1006G-TR","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STPSC1006G-TR SiC Schottky diode, 600 V, 10 A, zero reverse recovery, 175°C junction temperature, D²PAK surface mount.","salesMarkdown":"For new designs, consider the current-generation SiC Schottky diodes from ST's portfolio; for BOM fills, we source this exact code through our independent distribution network, verified against counterfeits, and quote it against an RFQ. ## SiC Schottky — zero reverse recovery is the headline This is a silicon-carbide Schottky diode rated for 600 V DC reverse voltage and 10 A average rectified current, housed in a D²PAK surface-mount package. The defining characteristic is zero reverse recovery time — the SiC Schottky barrier eliminates the stored-charge tail that plagues silicon ultrafast diodes. In a 100 kHz PFC or LLC converter, that zero trr translates directly to lower switching losses and reduced EMI, because there is no reverse-recovery current spike for the MOSFET to commutate. The 650 pF capacitance at 0 V is low enough to keep capacitive turn-on losses modest at high frequency. The 600 V blocking voltage provides margin for 400 V bus applications, including power-factor-correction stages in server and telecom supplies. The 10 A average current is the thermal limit at a 175°C junction temperature — derating applies in practice, but the SiC die can sustain high current density. Forward voltage is 1.7 V at 10 A, a typical figure for a 600 V SiC Schottky of this die size; the positive temperature coefficient helps with current sharing if paralleled. Reverse leakage at 600 V is 150 µA, which is low for a SiC device and keeps standby losses in check. The D²PAK (TO-263AB) package has a large exposed metal tab on the bottom for heat sinking through the PCB.","metaTitle":"STPSC1006G-TR SiC Schottky Diode, 600V 10A, Zero Recovery","metaDescription":"STMicroelectronics STPSC1006G-TR SiC Schottky diode, 600V 10A, zero reverse recovery, 175°C Tj, D²PAK.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Speed":"No Recovery Time > 500mA (Io)","Series":"-","Package":"Tape & Reel (TR) Cut Tape (CT)","Technology":"SiC (Silicon Carbide) Schottky","Mounting Type":"Surface Mount","Package / Case":"TO-263-3, D²Pak (2 Leads + Tab), TO-263AB","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Base Product Number":"STPSC1006","Capacitance @ Vr, F":"650pF @ 0V, 1MHz","Supplier Device Package":"D²PAK","Reverse Recovery Time (trr)":"0 ns","Current - Reverse Leakage @ Vr":"150 µA @ 600 V","Voltage - DC Reverse (Vr) (Max)":"600 V","Current - Average Rectified (Io)":"10A","Operating Temperature - Junction":"-40°C ~ 175°C","Voltage - Forward (Vf) (Max) @ If":"1.7 V @ 10 A"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":null,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/0590a997e49948aa8a6b0e0d6a9ae1e5.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STPSC1006G-TR/alternatives.json"},"ai":{"faq":[{"question":"What is the replacement for STPSC1006G-TR?","answer":"There is no official pin-compatible successor listed in the official record for the STPSC1006G-TR. For new designs, ST's current-generation 600 V SiC Schottky diodes in D²PAK (e.g., the STPSC10H065 series or newer) are functional replacements but verify the forward voltage and capacitance match your circuit. For existing BOMs, we source the original STPSC1006G-TR through our network."},{"question":"Where to buy STPSC1006G-TR?","answer":"The STPSC1006G-TR is obsolete but available through our independent distribution channel. We source and quote it against an RFQ — submit a request for current availability and pricing."},{"question":"What is the reverse recovery time of STPSC1006G-TR?","answer":"Zero nanoseconds. As a SiC Schottky diode, the STPSC1006G-TR has no reverse recovery time — the datasheet lists 0 ns trr. This eliminates reverse recovery losses in hard-switched converters."},{"question":"STPSC1006G-TR vs STPSC1006D: what is the difference?","answer":"The STPSC1006D is the through-hole TO-220AC version of the same SiC Schottky die — same 600 V, 10 A, zero trr ratings. The STPSC1006G-TR is the surface-mount D²PAK variant on tape and reel. Electrical performance is identical; the choice is purely mounting and assembly process."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STPSC1006G-TR","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STPSC1006G-TR when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}