{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STP9NK60Z","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STP9NK60Z","canonicalUrl":"https://icboms.com/stmicroelectronics/STP9NK60Z","factsUrl":"https://icboms.com/api/mcp/products/STP9NK60Z","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics SuperMESH™ N-channel MOSFET, STP9NK60Z, 600 V Vdss, 7 A Id, 950 mOhm Rds(on) at 10 V, TO-220-3 through-hole package.","salesMarkdown":"## 600 V blocking, 7 A continuous — the power-switch spec that matters The STP9NK60Z: 600 V drain-to-source blocking and 7 A continuous drain current suit offline flyback converters and PFC boost stages. Total gate charge is 53 nC at 10 V. ## Through-hole TO-220 — the repair-bench favourite The STP9NK60Z comes in a TO-220-3 through-hole package — the same footprint that's been a staple on power boards for decades. For the board-level repair tech, that means a clean desolder-and-replace job with a standard iron and a solder sucker; no hot-air rework station needed. The tab is the drain, so the heatsink pad in the layout must be isolated or tied to the drain rail. Maximum power dissipation is 125 W at the case, but that's at 25°C case — real-world derating means a heatsink sized for the actual dissipation, not the datasheet ceiling. For the BOM cost engineer, that means no single-source risk from obsolescence on this line. The base product number is STP9NK60, so any suffix variants (Z, FP, etc.) share the same die platform; the Z suffix indicates the SuperMESH™ generation.","metaTitle":"STP9NK60Z N-Channel MOSFET, 600 V, 7 A, TO-220","metaDescription":"STP9NK60Z N-channel MOSFET from STMicroelectronics SuperMESH™ series. 600 V Vdss, 7 A Id, 950 mOhm Rds(on).","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"SuperMESH™","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±30V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4.5V @ 100µA","Base Product Number":"STP9NK60","Operating Temperature":"-55°C~150°C(TJ)","Rds On (Max) @ Id, Vgs":"950mOhm @ 3.5A, 10V","Power Dissipation (Max)":"125W (Tc)","Supplier Device Package":"TO-220","Gate Charge (Qg) (Max) @ Vgs":"53 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"1110 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"7A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.8800","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/0f272af62a0195d09419c6befc5b404d.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STP9NK60Z/alternatives.json"},"ai":{"faq":[{"question":"What is the Rds(on) of STP9NK60Z?","answer":"Maximum Rds(on) is 950 mOhm at 3.5 A drain current with 10 V gate drive. That's the spec at 25°C junction; expect it to rise with temperature per the normalised curve in the datasheet."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STP9NK60Z","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STP9NK60Z when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}