{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STP9N65M2","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STP9N65M2","canonicalUrl":"https://icboms.com/stmicroelectronics/STP9N65M2","factsUrl":"https://icboms.com/api/mcp/products/STP9N65M2","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics MDmesh™ STP9N65M2, N-Channel MOSFET, 650 V Vdss, 5 A Id, 900 mOhm Rds(on) at 10 V, 10 nC Qg, TO-220-3, Through Hole, 150°C TJ.","salesMarkdown":"## 650 V N-channel in a TO-220 — what the bench sees Gate charge is 10 nC typical at 10 V — low enough that a standard gate-drive transformer or a simple driver IC handles the switching without excessive cross-conduction loss. ## On-resistance and gate charge — the switching loss trade-off Rds(on) at 900 mOhm is specified at 2.5 A and 10 V gate voltage — the 10 V drive level is the standard for logic-level gate drivers. The 10 nC total gate charge at 10 V means the driver needs to source only about 10 nC per switching cycle — at 100 kHz switching frequency that is 1 mA average drive current, well within the capability of a TO-220 package's thermal budget. ROHS3 compliant per. The base product number STP9N65 covers a family of voltage and current variants; the M2 suffix identifies the MDmesh™ generation. ## Through-hole TO-220 — thermal and mechanical fit The TO-220-3 through-hole package (mounting hole pattern standard to the JEDEC outline) allows a heatsink to be bolted directly to the tab. Maximum power dissipation is 60 W at case temperature — the actual dissipation in a 650 V, 5 A application is limited by the Rds(on) and switching losses, not the package ceiling.","metaTitle":"STP9N65M2 MOSFET N-Channel 650V 5A TO-220, MDmesh™","metaDescription":"STP9N65M2 N-channel 650V 5A MOSFET in TO-220. 900 mOhm Rds(on) at 2.5A, 10 nC gate charge. Active production, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"MDmesh™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Base Product Number":"STP9N65","Operating Temperature":"150°C (TJ)","Rds On (Max) @ Id, Vgs":"900mOhm @ 2.5A, 10V","Power Dissipation (Max)":"60W (Tc)","Supplier Device Package":"TO-220","Gate Charge (Qg) (Max) @ Vgs":"10 nC @ 10 V","Drain to Source Voltage (Vdss)":"650 V","Input Capacitance (Ciss) (Max) @ Vds":"315 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"5A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.7400","priceTiers":[{"qty":1,"price":"$1.83000","currency":"USD"},{"qty":10,"price":"$1.64200","currency":"USD"},{"qty":100,"price":"$1.31970","currency":"USD"},{"qty":500,"price":"$1.08424","currency":"USD"},{"qty":1000,"price":"$1.02288","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/80039d9caeaf1d992bff49865baf9ed5.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STP9N65M2/alternatives.json"},"ai":{"faq":[],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STP9N65M2","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STP9N65M2 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}