{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STP9N60M2","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STP9N60M2","canonicalUrl":"https://icboms.com/stmicroelectronics/STP9N60M2","factsUrl":"https://icboms.com/api/mcp/products/STP9N60M2","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STP9N60M2, MDmesh™ II Plus N-Channel MOSFET, 600 V Vdss, 5.5 A Id, 780 mOhm Rds(on) at 10 V, 10 nC Qg, TO-220-3 through-hole package.","salesMarkdown":"## 600 V N-channel MOSFET for switched-mode power conversion The STP9N60M2: The TO-220-3 through-hole package suits designs that already use a heatsink — the tab is the drain, so the mounting hole and pad carry the thermal path to the ambient. The 780 mOhm RDS(on) is specified at 3 A, 10 V.","metaTitle":"STP9N60M2 N-Channel MOSFET, 600 V, 5.5 A, TO-220","metaDescription":"STP9N60M2 N-channel 600 V MOSFET, 5.5 A continuous drain, 780 mOhm RDS(on) at 10 V. Active lifecycle, TO-220 package.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™ II Plus","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Base Product Number":"STP9N60","Operating Temperature":"150°C (TJ)","Rds On (Max) @ Id, Vgs":"780mOhm @ 3A, 10V","Power Dissipation (Max)":"60W (Tc)","Supplier Device Package":"TO-220","Gate Charge (Qg) (Max) @ Vgs":"10 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"320 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"5.5A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.5600","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/b0c278c39250eb1794e7dfb0a0dbf303.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STP9N60M2/alternatives.json"},"ai":{"faq":[{"question":"What is the RDS(on) of STP9N60M2?","answer":"The maximum RDS(on) is 780 mOhm at a drain current of 3 A with a 10 V gate-to-source drive."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STP9N60M2","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STP9N60M2 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}