{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STP95N4F3","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STP95N4F3","canonicalUrl":"https://icboms.com/stmicroelectronics/STP95N4F3","factsUrl":"https://icboms.com/api/mcp/products/STP95N4F3","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STripFET™ III STP95N4F3, N-Channel Power MOSFET, 40 V Vdss, 80 A Id, 6.2 mOhm Rds(on) at 10 V, TO-220-3, -55°C to 175°C junction.","salesMarkdown":"## 40 V, 80 A N-channel — STripFET III in TO-220 ## Junction temperature range — what it tells you This makes the part suitable for environments with wide thermal swings — under-hood automotive, industrial motor drives in unventilated cabinets, or power supplies near heat sources. The 175°C maximum junction allows higher continuous current operation when properly heatsunk, but the 110 W power dissipation limit at the case must be respected in the thermal design. ## Gate drive and switching parameters The gate threshold voltage is specified at 4 V maximum with 250 µA drain current, and the drive voltage for achieving minimum on-resistance is 10 V. Total gate charge is 54 nC at 10 V, a moderate figure that keeps gate-drive losses in check at switching frequencies up to several hundred kilohertz. Input capacitance is 2200 pF at 25 V drain-source, which influences the drive circuit design — a 10-15 ohm gate resistor is typical to control ringing without slowing the edge too much. The maximum gate-source voltage is ±20 V, so the drive rail should be regulated to avoid exceeding this during transients.","metaTitle":"STP95N4F3 N-Channel MOSFET, 40V 80A TO-220","metaDescription":"STP95N4F3 N-channel STripFET III MOSFET, 40V Vdss, 80A continuous drain, 6.2mOhm Rds(on) at 10V. Active lifecycle. Available to order.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"STripFET™ III","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Base Product Number":"STP95","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"6.2mOhm @ 40A, 10V","Power Dissipation (Max)":"110W (Tc)","Supplier Device Package":"TO-220","Gate Charge (Qg) (Max) @ Vgs":"54 nC @ 10 V","Drain to Source Voltage (Vdss)":"40 V","Input Capacitance (Ciss) (Max) @ Vds":"2200 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"80A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.1264","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/aa6d1514704580975ca4000f9ea7fcf9.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STP95N4F3/alternatives.json"},"ai":{"faq":[{"question":"Does STP95N4F3 require a heatsink for 90A?","answer":"At 90 A continuous drain current, the 6.2 mOhm maximum on-resistance produces about 50 W of conduction loss. With a maximum power dissipation of 110 W at the case, a heatsink is necessary to keep the junction temperature within the 175°C limit. The exact heatsink size depends on ambient temperature and airflow."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STP95N4F3","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STP95N4F3 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}