{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STP8NS25FP","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STP8NS25FP","canonicalUrl":"https://icboms.com/stmicroelectronics/STP8NS25FP","factsUrl":"https://icboms.com/api/mcp/products/STP8NS25FP","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics MESH OVERLAY™ N-Channel MOSFET, STP8NS25FP, 250 V drain-source, 8 A continuous drain at 25°C, 450 mOhm max Rds(on) at 4 A, 10 V gate drive, TO-220-3 Full Pack through-hole package.","salesMarkdown":"## Gate charge and switching considerations Maximum gate charge is 51.8 nC at 10 V gate drive, with an input capacitance of 770 pF at 25 V drain-source. These figures set the gate drive requirements for the switching frequency target — a 10 V gate signal with sufficient peak current to charge 51.8 nC within the desired turn-on time. ## Thermal and mounting in the TO-220FP Maximum power dissipation is 30 W at case temperature, with the junction rated to 150°C. The through-hole mounting suits point-to-point wiring, terminal blocks, or PCB mounting with the leads formed to the hole pattern. The isolated tab simplifies assembly but does increase thermal resistance compared to a standard TO-220 with an insulator; the heatsink design should account for the package's thermal impedance.","metaTitle":"STP8NS25FP N-Channel MOSFET, 250 V, 8 A, TO-220FP","metaDescription":"STP8NS25FP N-Channel MOSFET from STMicroelectronics, 250 V drain-source, 8 A continuous, 450 mOhm Rds(on) at 10 V.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MESH OVERLAY™","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3 Full Pack","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Base Product Number":"STP8N","Operating Temperature":"150°C(TJ)","Rds On (Max) @ Id, Vgs":"450mOhm @ 4A, 10V","Power Dissipation (Max)":"30W (Tc)","Supplier Device Package":"TO-220FP","Gate Charge (Qg) (Max) @ Vgs":"51.8 nC @ 10 V","Drain to Source Voltage (Vdss)":"250 V","Input Capacitance (Ciss) (Max) @ Vds":"770 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"8A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":null,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/7635be172ecd7c91f983b8eedb2699d2.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STP8NS25FP/alternatives.json"},"ai":{"faq":[{"question":"Where can I buy STP8NS25FP?","answer":"No stock count or price is published here."},{"question":"What is the Rds(on) of STP8NS25FP?","answer":"Maximum on-resistance is 450 mOhm at 4 A drain current with 10 V gate drive. This is the specified operating point for the Rds(on) rating."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STP8NS25FP","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STP8NS25FP when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}