{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STP8NS25","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STP8NS25","canonicalUrl":"https://icboms.com/stmicroelectronics/STP8NS25","factsUrl":"https://icboms.com/api/mcp/products/STP8NS25","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STP8NS25, N-Channel MOSFET, MESH OVERLAY™ series, 250 Vdss, 8 A Id, 450 mOhm Rds(on) @ 10V, TO-220-3 through-hole, 150°C junction temperature.","salesMarkdown":"## 250 V drain-source, 8 A continuous — a mid-voltage power switch The STP8NS25: Packaged in a standard TO-220-3 through-hole case, it suits medium-voltage power switching in off-line supplies, DC-DC converters, and motor control circuits where a 250 V blocking voltage and single-digit amp current are the operating range. ## Obsolete — planning a replacement now STMicroelectronics lists the STP8NS25 as obsolete. For a new BOM line or a repair stock holding, you are looking at the surplus and broker channel. The TO-220-3 footprint is a common one, so a pin-compatible N-channel MOSFET in the same voltage and current class — 250 V, 8 A — from another manufacturer can be qualified as a drop-in. The gate charge of 51.8 nC at 10 V and input capacitance of 770 pF at 25 V are the numbers to match when screening a replacement, since they drive the gate-drive losses and switching speed. Date-code and lot traceability are verified before shipment — the TO-220 body and laser marking are checked against known-good STMicroelectronics production runs to screen for re-marked or counterfeit material.","metaTitle":"STP8NS25 N-Channel MOSFET, 250V 8A TO-220, Obsolete","metaDescription":"STP8NS25 N-Channel MOSFET, 250V drain-source, 8A continuous drain, 450mOhm Rds(on) at 10V. TO-220-3. Obsolete.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MESH OVERLAY™","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Base Product Number":"STP8N","Operating Temperature":"150°C (TJ)","Rds On (Max) @ Id, Vgs":"450mOhm @ 4A, 10V","Power Dissipation (Max)":"80W (Tc)","Supplier Device Package":"TO-220","Gate Charge (Qg) (Max) @ Vgs":"51.8 nC @ 10 V","Drain to Source Voltage (Vdss)":"250 V","Input Capacitance (Ciss) (Max) @ Vds":"770 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"8A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.2500","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/7635be172ecd7c91f983b8eedb2699d2.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STP8NS25/alternatives.json"},"ai":{"faq":[],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STP8NS25","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STP8NS25 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}