{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STP8NM50N","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STP8NM50N","canonicalUrl":"https://icboms.com/stmicroelectronics/STP8NM50N","factsUrl":"https://icboms.com/api/mcp/products/STP8NM50N","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STP8NM50N, MDmesh™ II N-Channel MOSFET, 500 V drain-source, 5 A continuous drain, 790 mOhm Rds(on) at 10 V, TO-220-3 through-hole package, active lifecycle.","salesMarkdown":"The STP8NM50N is an STMicroelectronics N-channel power MOSFET from the MDmesh™ II family, built for high-voltage switching in the 500 V class. The input capacitance of 364 pF at 50 V drain-source is low enough that the gate waveform stays clean with a standard 10 Ω to 22 Ω gate resistor, but the 150°C junction temperature rating means the thermal design must handle the sum of conduction and switching losses at full load. The MDmesh II platform has been a workhorse for years, so the risk of a surprise EOL in the next procurement cycle is low — but as with any active part, the buyer should confirm current lead times and pricing at quote time.","metaTitle":"STP8NM50N N-Channel MOSFET, 500 V, 5 A, TO-220","metaDescription":"STP8NM50N MDmesh II N-channel MOSFET, 500 V drain-source, 5 A continuous drain, 790 mOhm Rds(on) at 10 V. Active lifecycle, TO-220-3 package.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™ II","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Base Product Number":"STP8NM50","Operating Temperature":"150°C(TJ)","Rds On (Max) @ Id, Vgs":"790mOhm @ 2.5A, 10V","Power Dissipation (Max)":"45W (Tc)","Supplier Device Package":"TO-220","Gate Charge (Qg) (Max) @ Vgs":"14 nC @ 10 V","Drain to Source Voltage (Vdss)":"500 V","Input Capacitance (Ciss) (Max) @ Vds":"364 pF @ 50 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"5A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.3800","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/d4262669962c23c021cb2693cb2c2337.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STP8NM50N/alternatives.json"},"ai":{"faq":[{"question":"What is the Rds(on) of STP8NM50N?","answer":"The maximum on-resistance is 790 mOhm at 2.5 A drain current with 10 V gate drive."},{"question":"What is the power dissipation of STP8NM50N?","answer":"The maximum power dissipation is 45 W at case temperature."},{"question":"What is the drain current rating of STP8NM50N?","answer":"The continuous drain current is 5 A at 25°C case temperature."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STP8NM50N","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STP8NM50N when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}