{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STP7NM50N","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STP7NM50N","canonicalUrl":"https://icboms.com/stmicroelectronics/STP7NM50N","factsUrl":"https://icboms.com/api/mcp/products/STP7NM50N","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STP7NM50N, MDmesh™ II series, N-Channel MOSFET, 500 V drain-source, 5 A continuous drain, 780 mOhm Rds(on) at 10 V, 12 nC gate charge, TO-220-3 package, -55°C to 150°C junction temperature.","salesMarkdown":"The STP7NM50N: The 500 V rating targets offline switch-mode power supplies, power-factor-correction stages, and high-voltage DC-DC converters where the primary-side switch sees rectified mains voltage. ## 780 mOhm on-resistance and 12 nC gate charge — the switching-loss trade Maximum on-resistance is 780 mOhm at 2.5 A drain current with 10 V gate drive, and gate charge totals 12 nC at 10 V. For a 500 V device these figures place it in the medium-Rds(on), low-Qg region — conduction loss is moderate, but the light gate charge keeps the driver burden low and switching edges crisp. Input capacitance is 400 pF at 50 V drain-source, which together with the Qg means a standard gate-driver IC or a simple driver transformer can handle the turn-on and turn-off without excessive cross-conduction. ## Obsolete — sourcing reality for a discontinued TO-220 MOSFET ST lists the STP7NM50N as Obsolete. For a BOM line that still calls out this order code, the available channel is independent distribution — new-old-stock or surplus inventory sourced from franchised overstock, contract-manufacturer residue, or verified broker lots. Date-code provenance matters here; any lot surfacing years after the EOL notice should be inspected for traceability and moisture sensitivity.","metaTitle":"STP7NM50N N-Channel MOSFET, 500 V, 5 A, TO-220, Obsolete","metaDescription":"STP7NM50N MDmesh™ II N-channel MOSFET, 500 Vdss, 5 A continuous, 780 mOhm Rds(on), 12 nC Qg, TO-220. Obsolete per ST.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™ II","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Base Product Number":"STP7N","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"780mOhm @ 2.5A, 10V","Power Dissipation (Max)":"45W (Tc)","Supplier Device Package":"TO-220","Gate Charge (Qg) (Max) @ Vgs":"12 nC @ 10 V","Drain to Source Voltage (Vdss)":"500 V","Input Capacitance (Ciss) (Max) @ Vds":"400 pF @ 50 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"5A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.9600","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/7ef8073322c8b2f1e7ae566561608f4b.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STP7NM50N/alternatives.json"},"ai":{"faq":[],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STP7NM50N","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STP7NM50N when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}