{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STP7NB60","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STP7NB60","canonicalUrl":"https://icboms.com/stmicroelectronics/STP7NB60","factsUrl":"https://icboms.com/api/mcp/products/STP7NB60","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics PowerMESH™ series, N-Channel MOSFET, 600 V drain-to-source voltage, 7.2 A continuous drain at 25°C, 1.2 Ohm on-resistance at 10 V gate drive, TO-220-3 through-hole package.","salesMarkdown":"## Obsolete — the sourcing reality Availability is intermittent and depends on inventory held by distributors and excess-stock holders. 600 V drain-to-source voltage (Vdss). 45 nC typical gate charge at 10 V. 1625 pF input capacitance at 25 V drain-source. ## Package and rework — TO-220 through-hole The tab is electrically connected to the drain.","metaTitle":"STP7NB60 N-Channel MOSFET, 600 V, 7.2 A, TO-220","metaDescription":"STMicroelectronics STP7NB60 N-Channel PowerMESH MOSFET, 600 Vdss, 7.2 A continuous drain, 1.2 Ohm Rds(on) at 10 V. Obsolete.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"PowerMESH™","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±30V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"5V @ 250µA","Operating Temperature":"150°C (TJ)","Rds On (Max) @ Id, Vgs":"1.2Ohm @ 3.6A, 10V","Power Dissipation (Max)":"125W (Tc)","Supplier Device Package":"TO-220","Gate Charge (Qg) (Max) @ Vgs":"45 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"1625 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"7.2A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.4400","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/1435cccef8a9102714b8efb03f1485ef.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STP7NB60/alternatives.json"},"ai":{"faq":[{"question":"Where can I buy STP7NB60 and get a price?","answer":"The STP7NB60 is obsolete and sourced through independent distribution. Submit an RFQ through this page to receive a quote."},{"question":"What is the replacement for STP7NB60?","answer":"STMicroelectronics does not list an official direct replacement for the STP7NB60. A suitable replacement would be a modern 600 V N-channel MOSFET in a TO-220 package with similar or better Rds(on) and gate charge characteristics, such as devices from the STP6N series or equivalent from other manufacturers. Evaluate the specific circuit requirements — gate drive voltage, switching frequency, and thermal budget — before substituting."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STP7NB60","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STP7NB60 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}