{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STP7N65M2","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STP7N65M2","canonicalUrl":"https://icboms.com/stmicroelectronics/STP7N65M2","factsUrl":"https://icboms.com/api/mcp/products/STP7N65M2","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STP7N65M2, MDmesh™ Series, N-Channel MOSFET, 650 V Vdss, 5 A Id, 1.15 Ω Rds(on), 9 nC Qg, TO-220-3, Through Hole, -55°C to 150°C.","salesMarkdown":"## 650 V N-channel MDmesh™ — what it was built for Packaged in a through-hole TO-220-3, it targets medium-power offline switch-mode supplies, flyback converters, and power-factor-correction stages where the combination of moderate current and high voltage is needed. ## Obsolete — sourcing the line without the factory ## Gate charge and capacitance — what the drive circuit sees With a maximum gate charge of 9 nC at 10 V and input capacitance of 270 pF at 100 V drain-source, the STP7N65M2 presents a light load to the gate driver. A simple driver or even a logic-level gate drive through a series resistor can switch it cleanly at frequencies typical of flyback and PFC stages (tens to low hundreds of kilohertz). The low Qg also reduces the power dissipated in the drive circuit itself, which matters in thermally constrained designs.","metaTitle":"STP7N65M2 MOSFET, 650 V N-Channel, 5 A, TO-220, Obsolete","metaDescription":"STP7N65M2 is an obsolete 650 V, 5 A N-channel MOSFET in TO-220. 1.15 Ω Rds(on), 9 nC gate charge.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Base Product Number":"STP7N","Operating Temperature":"-55°C~150°C(TJ)","Rds On (Max) @ Id, Vgs":"1.15Ohm @ 2.5A, 10V","Power Dissipation (Max)":"60W (Tc)","Supplier Device Package":"TO-220","Gate Charge (Qg) (Max) @ Vgs":"9 nC @ 10 V","Drain to Source Voltage (Vdss)":"650 V","Input Capacitance (Ciss) (Max) @ Vds":"270 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"5A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.4300","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/7dedc0f2c2d7a9e4c2f300c641b4dc8d.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STP7N65M2/alternatives.json"},"ai":{"faq":[{"question":"Is STP7N65M2 obsolete?","answer":"Yes, STP7N65M2 is listed as Obsolete by STMicroelectronics. Factory production has ceased; the part is available only through surplus and broker channels."},{"question":"What is the replacement for STP7N65M2?","answer":"For a new design, consider any current-production 650 V N-channel MOSFET in TO-220 with a similar 5 A current rating and 1.15 Ω or lower Rds(on). The MDmesh™ series includes active siblings; check the broader ST 650 V portfolio or equivalents from Infineon, onsemi, and Vishay."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STP7N65M2","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STP7N65M2 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}