{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STP7N60M2","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STP7N60M2","canonicalUrl":"https://icboms.com/stmicroelectronics/STP7N60M2","factsUrl":"https://icboms.com/api/mcp/products/STP7N60M2","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics MDmesh™ II Plus N-Channel MOSFET, STP7N60M2, 600V Vdss, 5A Id, 950mOhm Rds(on), TO-220-3, Tube.","salesMarkdown":"## 600 V, 5 A N-channel MOSFET in TO-220 The STP7N60M2 is a 600 V drain-source, 5 A continuous-drain N-channel power MOSFET from STMicroelectronics' MDmesh™ II Plus series, built on a striped layout process that reduces on-resistance per unit area while maintaining fast body-diode recovery for bridge topologies. The TO-220-3 through-hole package (supplier device package TO-220) allows direct mounting to a heatsink with a single screw, making thermal management straightforward in open-frame or enclosed power supplies. ## Conduction and switching parametrics Input capacitance is 271 pF at 100 V drain-source bias — this low capacitance, combined with the MDmesh II Plus technology's fast switching speed, means the device can achieve transition times under 20 ns in a properly laid-out half-bridge, reducing cross-conduction losses. Maximum power dissipation is 60 W at case temperature, derated linearly above 25°C — a heatsink with thermal resistance below 2°C/W is needed to sustain 5 A continuous conduction at high ambient temperatures. ## Temperature range and compliance Base product number STP7N60 identifies the die and package variant; the M2 suffix denotes the MDmesh II Plus generation, which offers lower gate charge and faster switching than the earlier MDmesh M1 generation in the same voltage class.","metaTitle":"STMicroelectronics STP7N60M2 N-Channel MOSFET","metaDescription":"STP7N60M2 N-channel 600V 5A MOSFET in TO-220. MDmesh II Plus series, 950mOhm Rds(on), 8.8nC gate charge. Active production, ROHS3 compliant. Sourced to order.","metaKeywords":null},"attributes":{"series":"MDmesh™ II Plus","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™ II Plus","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Base Product Number":"STP7N60","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"950mOhm @ 2.5A, 10V","Power Dissipation (Max)":"60W (Tc)","Supplier Device Package":"TO-220","Gate Charge (Qg) (Max) @ Vgs":"8.8 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"271 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"5A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.4100","priceTiers":[{"qty":1,"price":"$1.41000","currency":"USD"},{"qty":10,"price":"$1.15500","currency":"USD"},{"qty":100,"price":"$0.89820","currency":"USD"},{"qty":500,"price":"$0.76136","currency":"USD"},{"qty":1000,"price":"$0.62022","currency":"USD"},{"qty":2000,"price":"$0.58386","currency":"USD"},{"qty":5000,"price":"$0.55606","currency":"USD"},{"qty":10000,"price":"$0.53039","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/cda39dee8071d5b42f7a6c3a40a45d26.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STP7N60M2/alternatives.json"},"ai":{"faq":[{"question":"What is the closest functional second-source to STP7N60M2?","answer":"The STU7N60M2 is the IPAK (TO-251) through-hole packaged sibling with the same die — identical 600 V Vdss, 5 A Id, 950 mOhm Rds(on), 8.8 nC gate charge, and 60 W power dissipation. The STP9N65M2 offers a 650 V drain-source rating with 900 mOhm Rds(on) and 10 nC gate charge in the same TO-220 package, providing a higher voltage margin at the cost of slightly higher gate drive requirements."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STP7N60M2","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STP7N60M2 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}