{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STP70NS04ZC","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STP70NS04ZC","canonicalUrl":"https://icboms.com/stmicroelectronics/STP70NS04ZC","factsUrl":"https://icboms.com/api/mcp/products/STP70NS04ZC","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STP70NS04ZC, N-Channel Power MOSFET, 33V Vdss, 80A Id, 11mOhm Rds(on) @ 10V, 58nC Qg, TO-220-3, Through Hole, -55°C to 175°C.","salesMarkdown":"## 33 V, 80 A N-channel power MOSFET in TO-220 It is designed for high-current switching applications such as DC-DC converters, motor drives, and power supply rails where low on-resistance and fast switching are required. With an Rds(on) of 11 mOhm at 10 V gate drive, the STP70NS04ZC keeps conduction losses low at high current — at 40 A, dissipation in the channel is under 18 W, which the 180 W package power rating can handle with adequate heatsinking. ## Package and mounting — TO-220 through-hole The tab is the drain, and the metal back provides a low thermal resistance path to a heatsink — a thermal pad or mica insulator with thermal compound is typical for dissipating the 180 W maximum. The through-hole leads suit point-to-point wiring or PCB mounting with a heatsink clip. The ±20 V maximum gate-source voltage gives headroom for 10 V or 12 V gate drive rails, but the drive voltage for minimum Rds(on) is specified at 10 V — driving with 5 V will roughly double the on-resistance, so a 10 V rail is recommended for full rated performance.","metaTitle":"STP70NS04ZC N-Channel MOSFET, 33V, 80A, TO-220","metaDescription":"STP70NS04ZC N-Channel MOSFET from STMicroelectronics: 33V Vdss, 80A Id, 11mOhm Rds(on) at 10V, 58nC Qg, TO-220 package.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"-","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 1mA","Base Product Number":"STP70","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"11mOhm @ 40A, 10V","Power Dissipation (Max)":"180W (Tc)","Supplier Device Package":"TO-220","Gate Charge (Qg) (Max) @ Vgs":"58 nC @ 10 V","Drain to Source Voltage (Vdss)":"33 V","Input Capacitance (Ciss) (Max) @ Vds":"1930 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"80A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.0400","priceTiers":null},"links":{"datasheetUrl":null,"sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STP70NS04ZC/alternatives.json"},"ai":{"faq":[{"question":"What is the Rds(on) and gate charge of STP70NS04ZC?","answer":"The maximum gate charge is 58 nC at 10 V gate-source voltage."},{"question":"What is the drain current rating of STP70NS04ZC?","answer":"The continuous drain current rating is 80 A at 25°C case temperature."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STP70NS04ZC","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STP70NS04ZC when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}