{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STP6NK70Z","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STP6NK70Z","canonicalUrl":"https://icboms.com/stmicroelectronics/STP6NK70Z","factsUrl":"https://icboms.com/api/mcp/products/STP6NK70Z","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics SuperMESH™ series, STP6NK70Z, N-Channel MOSFET, 700 V Vdss, 5 A continuous drain, 1.8 Ohm Rds(on) at 10 V, 47 nC gate charge, TO-220-3 through-hole package.","salesMarkdown":"## 700 V, 5 A N-channel — the SuperMESH™ power switch It is rated for a drain-source voltage of 700 V and a continuous drain current of 5 A at 25 °C case temperature, making it suitable for flyback converters, PFC stages, and offline power supplies in the 100–200 W range. The device is packaged in a through-hole TO-220-3, a standard footprint for heatsink-mounting in industrial and consumer power electronics. ## 1.8 Ohm Rds(on) — conduction loss and gate drive The recommended drive voltage for achieving minimum Rds(on) is 10 V, with a maximum gate-source rating of ±30 V. ## Obsolete — sourcing the STP6NK70Z today Engineers evaluating a replacement should look for a 700 V, 5 A N-channel MOSFET in a TO-220 package with a similar Rds(on) and gate charge profile; the SuperMESH™ series has been superseded by newer generations such as MDmesh™, but pin-compatibility and parametric matching need to be verified against the specific application.","metaTitle":"STP6NK70Z N-Channel MOSFET, 700 V, 5 A, SuperMESH™, TO-220","metaDescription":"STP6NK70Z N-Channel MOSFET from STMicroelectronics SuperMESH™ series. 700 V Vdss, 5 A continuous drain, 1.8 Ohm Rds(on) at 10 V.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"SuperMESH™","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±30V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4.5V @ 100µA","Base Product Number":"STP6N","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"1.8Ohm @ 2.5A, 10V","Power Dissipation (Max)":"110W (Tc)","Supplier Device Package":"TO-220","Gate Charge (Qg) (Max) @ Vgs":"47 nC @ 10 V","Drain to Source Voltage (Vdss)":"700 V","Input Capacitance (Ciss) (Max) @ Vds":"930 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"5A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.8700","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/581721cf25e1c0e3c1727f1222b5c5a4.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STP6NK70Z/alternatives.json"},"ai":{"faq":[{"question":"What is the replacement for STP6NK70Z?","answer":"No official replacement order code is listed. A functionally equivalent replacement should be a 700 V, 5 A N-channel MOSFET in a TO-220 package with a similar Rds(on) (1.8 Ohm max at 10 V) and gate charge (47 nC). Candidates from ST's newer MDmesh™ family or other vendors require individual parametric verification against the target application."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STP6NK70Z","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STP6NK70Z when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}