{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STP6NK50Z","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STP6NK50Z","canonicalUrl":"https://icboms.com/stmicroelectronics/STP6NK50Z","factsUrl":"https://icboms.com/api/mcp/products/STP6NK50Z","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics SuperMESH™ N-Channel MOSFET, 500V Vdss, 5.6A Id @ 25°C, 1.2Ω Rds(on) @ 2.8A 10V, 24.6nC Qg, TO-220-3 through-hole, -55°C to 150°C.","salesMarkdown":"## 500V, 5.6A, 1.2Ω — the SuperMESH™ switch for off-line supplies The STP6NK50Z is an N-channel MOSFET from STMicroelectronics' SuperMESH™ series, built for high-voltage switching in power supplies, adapters, and lighting ballasts. The TO-220 through-hole package handles 90 W dissipation with a proper heatsink — the thermal pad is the tab, so the mounting screw and interface pad are part of the thermal path. ## Gate drive and switching — what the numbers mean The 1.2 Ω Rds(on) is specified at 10 V gate drive, not 4.5 V. The threshold voltage maxes at 4.5 V at 50 µA, but the channel is not fully enhanced until the gate sees the full 10 V. If your controller drives a lower gate voltage, expect the on-resistance to climb. The 24.6 nC Qg at 10 V is modest — a standard totem-pole gate driver or a small bootstrap capacitor can handle it. The 690 pF Ciss is low enough that the Miller plateau is brief, which helps keep cross-conduction losses down in half-bridge topologies. For new designs, look at current SuperMESH™ parts with similar voltage and current ratings.","metaTitle":"STP6NK50Z N-Channel MOSFET, 500V 5.6A, TO-220, Obsolete","metaDescription":"STP6NK50Z SuperMESH N-channel MOSFET: 500V Vdss, 5.6A Id, 1.2Ω Rds(on), TO-220.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"SuperMESH™","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±30V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4.5V @ 50µA","Base Product Number":"STP6N","Operating Temperature":"-55°C~150°C(TJ)","Rds On (Max) @ Id, Vgs":"1.2Ohm @ 2.8A, 10V","Power Dissipation (Max)":"90W (Tc)","Supplier Device Package":"TO-220","Gate Charge (Qg) (Max) @ Vgs":"24.6 nC @ 10 V","Drain to Source Voltage (Vdss)":"500 V","Input Capacitance (Ciss) (Max) @ Vds":"690 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"5.6A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":null,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/7de469a1948881e8e5c9d87cd72be891.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STP6NK50Z/alternatives.json"},"ai":{"faq":[],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STP6NK50Z","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STP6NK50Z when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}