{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STP6NB90","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STP6NB90","canonicalUrl":"https://icboms.com/stmicroelectronics/STP6NB90","factsUrl":"https://icboms.com/api/mcp/products/STP6NB90","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STP6NB90, PowerMESH™ N-Channel MOSFET, 900 V Vdss, 5.8 A Id, 2 Ohm Rds(on) at 10 V, 55 nC Qg, TO-220-3 through-hole package.","salesMarkdown":"The STP6NB90: The 900 V rating suits universal-input designs. The TO-220 through-hole package allows mounting to a heatsink for the 135 W maximum power dissipation, though the junction temperature is limited to 150°C. The gate charge of 55 nC at 10 V is moderate for a 900 V device. The input capacitance of 1400 pF at 25 V drain-source confirms the gate drive is not unusually heavy. The gate threshold voltage maximum of 5 V at 250 µA drain current means a 10 V gate drive is needed to achieve the rated 2 Ohm Rds(on); a 5 V logic-level drive will not fully enhance the channel, so plan for a 10 V supply rail or a bootstrap circuit. This means it is no longer manufactured and not available through authorized distribution channels. ## Thermal and mechanical — TO-220 mounting The maximum junction temperature is 150°C, so derate the power dissipation linearly above 25°C case temperature. The gate-source voltage is limited to ±30 V, which is generous but still requires a zener clamp if the gate drive overshoots.","metaTitle":"STP6NB90 PowerMESH N-Channel MOSFET, 900 V, 5.8 A, TO-220","metaDescription":"STP6NB90 N-channel 900 V 5.8 A PowerMESH MOSFET in TO-220.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"PowerMESH™","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±30V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"5V @ 250µA","Base Product Number":"STP6N","Operating Temperature":"150°C (TJ)","Rds On (Max) @ Id, Vgs":"2Ohm @ 3A, 10V","Power Dissipation (Max)":"135W (Tc)","Supplier Device Package":"TO-220","Gate Charge (Qg) (Max) @ Vgs":"55 nC @ 10 V","Drain to Source Voltage (Vdss)":"900 V","Input Capacitance (Ciss) (Max) @ Vds":"1400 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"5.8A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":null,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/b5253408b34a8bf0179d56054a9c84c8.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STP6NB90/alternatives.json"},"ai":{"faq":[],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STP6NB90","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STP6NB90 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}