{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STP6N65M2","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STP6N65M2","canonicalUrl":"https://icboms.com/stmicroelectronics/STP6N65M2","factsUrl":"https://icboms.com/api/mcp/products/STP6N65M2","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STP6N65M2, MDmesh™ N-Channel MOSFET, 650 V drain-source, 4 A continuous drain, 1.35 Ohm Rds(on) at 10 V, 9.8 nC gate charge, TO-220-3 through-hole package, -55 to 150 °C junction temperature.","salesMarkdown":"Its 650 V drain-source voltage rating and 4 A continuous drain current suit it for flyback and forward-converter primary-side switches, PFC stages, and auxiliary power rails where through-hole mounting and a TO-220 package are acceptable. ## Obsolete — sourcing reality for sustainment programs The 650 V drain-source voltage gives headroom for universal-input AC-DC converters (up to 400 V DC bus) plus derating for leakage inductance spikes. The 9.8 nC gate charge keeps the gate-drive energy low, which helps in high-frequency designs. The 60 W maximum power dissipation assumes a properly heatsinked TO-220 package. ## Package and mounting — through-hole TO-220 The through-hole leads suit wave-soldering or hand-soldering into a PCB.","metaTitle":"STP6N65M2 N-Channel MOSFET, 650V 4A TO-220, Obsolete","metaDescription":"STP6N65M2 MDmesh N-channel MOSFET, 650 V drain-source, 4 A continuous drain, 1.35 Ohm Rds(on) at 10 V. TO-220-3 package.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Base Product Number":"STP6N","Operating Temperature":"-55°C~150°C(TJ)","Rds On (Max) @ Id, Vgs":"1.35Ohm @ 2A, 10V","Power Dissipation (Max)":"60W (Tc)","Supplier Device Package":"TO-220","Gate Charge (Qg) (Max) @ Vgs":"9.8 nC @ 10 V","Drain to Source Voltage (Vdss)":"650 V","Input Capacitance (Ciss) (Max) @ Vds":"226 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"4A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.2100","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/e0da323f4dd442c709141ad9cb551cf8.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STP6N65M2/alternatives.json"},"ai":{"faq":[{"question":"What is the replacement for STP6N65M2?","answer":"Any replacement must be evaluated on form-fit-function criteria — same 650 V drain-source, 4 A drain current, N-channel, TO-220 package."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STP6N65M2","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STP6N65M2 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}