{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STP6N60M2","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STP6N60M2","canonicalUrl":"https://icboms.com/stmicroelectronics/STP6N60M2","factsUrl":"https://icboms.com/api/mcp/products/STP6N60M2","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics MDmesh™ II Plus series, STP6N60M2, N-Channel MOSFET, 600 V Vdss, 1.2 Ohm Rds(on) max @ 2.25 A, 10 V, 4.5 A continuous drain, 8 nC gate charge, TO-220-3 through-hole package, -55 to 150 °C junction temperature.","salesMarkdown":"Its 600 V drain-source rating (Vdss) covers the 400 V DC bus in power-factor-correction stages and flyback converters, with margin for transient spikes. Gate charge is 8 nC at 10 V, a low figure that keeps switching losses modest in hard-switched topologies running at 100 kHz or higher. Input capacitance is 232 pF at 100 V drain bias, which simplifies the drive circuit — a standard gate-driver IC can push the gate without a pre-driver stage. ## Package and temperature grade — through-hole, wide range Housed in a TO-220-3 through-hole package, the STP6N60M2 suits designs where the heatsink mounts to the board or chassis — the metal tab is the drain.","metaTitle":"STP6N60M2 N-Channel MOSFET, 600 V, 1.2 Ohm, TO-220","metaDescription":"STP6N60M2 N-Channel MOSFET from STMicroelectronics MDmesh II Plus series. 600 V Vdss, 1.2 Ohm Rds(on) at 10 V, 4.5 A continuous drain, TO-220 package.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™ II Plus","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Base Product Number":"STP6N60","Operating Temperature":"-55°C~150°C(TJ)","Rds On (Max) @ Id, Vgs":"1.2Ohm @ 2.25A, 10V","Power Dissipation (Max)":"60W (Tc)","Supplier Device Package":"TO-220","Gate Charge (Qg) (Max) @ Vgs":"8 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"232 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"4.5A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.6800","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/cdb491530e286c502284b33df1741aac.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STP6N60M2/alternatives.json"},"ai":{"faq":[{"question":"What is the Rds(on) of STP6N60M2 at typical gate drive?","answer":"Maximum on-resistance is 1.2 Ohm at 10 V gate drive with 2.25 A drain current. At 4.5 A continuous drain, conduction loss will be higher — factor that into the thermal design."},{"question":"Is STP6N60M2 equivalent to STP6N60?","answer":"The base product number is STP6N60, and the STP6N60M2 is the MDmesh II Plus generation variant. Pin-compatible in the same TO-220 package, but the M2 suffix indicates improved switching performance and lower gate charge — verify the Rds(on) and gate drive requirements against your design before substituting directly."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STP6N60M2","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STP6N60M2 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}