{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STP65N045M9","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STP65N045M9","canonicalUrl":"https://icboms.com/stmicroelectronics/STP65N045M9","factsUrl":"https://icboms.com/api/mcp/products/STP65N045M9","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STP65N045M9 N-Channel MOSFET, 650 V drain-source voltage, 55 A continuous drain current, 45 mOhm Rds(on) at 10 V, TO-220-3 through-hole package, -55°C to 150°C operating junction temperature.","salesMarkdown":"## 650 V, 45 mOhm — the numbers that decide the BOM The STP65N045M9: It is built on MDmesh M9 technology, a planar structure that keeps the on-resistance low while handling 650 V drain-source. This combination targets high-voltage switching applications — power-factor-correction stages, flyback and LLC resonant converters, and motor drives where the DC bus sits at 400 V or below. The 650 V Vdss provides margin above a typical 400 V PFC rail. Gate charge of 80 nC at 10 V is moderate. The 4610 pF input capacitance at 400 V Vds sets the miller plateau width. Through-hole TO-220-3. The tab is the drain. No AEC-Q grade is stated, so treat it as an industrial-grade device unless you verify otherwise.","metaTitle":"STP65N045M9 N-Channel MOSFET, 650 V, 55 A, TO-220","metaDescription":"STP65N045M9 N-Channel MOSFET from STMicroelectronics. 650 V Vdss, 55 A Id, 45 mOhm Rds(on) at 10 V. Active lifecycle.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"-","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±30V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4.2V @ 250µA","Base Product Number":"STP65N","Operating Temperature":"-55°C~150°C(TJ)","Rds On (Max) @ Id, Vgs":"45mOhm @ 28A, 10V","Power Dissipation (Max)":"245W (Tc)","Supplier Device Package":"TO-220","Gate Charge (Qg) (Max) @ Vgs":"80 nC @ 10 V","Drain to Source Voltage (Vdss)":"650 V","Input Capacitance (Ciss) (Max) @ Vds":"4610 pF @ 400 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"55A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$11.8700","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/e6c32b6c25a833cc2707420245dcd387.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STP65N045M9/alternatives.json"},"ai":{"faq":[{"question":"Can I use STP65N045M9 for a 48 V application?","answer":"Yes. The 650 V Vdss rating far exceeds a 48 V bus, so the part is overkill for voltage but usable. The 45 mOhm Rds(on) is low enough that conduction losses at 10 A are under 5 W. The main penalty is the larger TO-220 package compared to a 60 V or 100 V logic-level MOSFET that would switch faster with lower gate charge."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STP65N045M9","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STP65N045M9 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}