{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STP60N3LH5","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STP60N3LH5","canonicalUrl":"https://icboms.com/stmicroelectronics/STP60N3LH5","factsUrl":"https://icboms.com/api/mcp/products/STP60N3LH5","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STP60N3LH5, STripFET™ V Series, N-Channel MOSFET, 30 V Vdss, 48 A Id, 8.4 mOhm Rds(on) at 24 A, 10 V, TO-220-3, Through Hole, -55 to 175 °C.","salesMarkdown":"## 30 V, 8.4 mOhm N-channel in TO-220 — STripFET V generation ## 8.8 nC gate charge — switching speed and drive budget The total gate charge at 5 V is 8.8 nC, which keeps the gate-drive energy per switching cycle low. The logic-level gate-drive threshold — 3 V maximum at 250 µA — allows direct drive from 5 V logic or a basic gate-driver IC. STMicroelectronics lists the STP60N3LH5 as obsolete. For BOM lines already qualified to this TO-220 footprint and 30 V / 48 A rating, the remaining channel is surplus and broker inventory. ## -55 to 175 °C junction — military temperature range","metaTitle":"STP60N3LH5 N-Channel MOSFET, 30V, 8.4mOhm, TO-220","metaDescription":"STP60N3LH5 N-channel MOSFET from STripFET V series, 30V Vdss, 8.4mOhm Rds(on) at 24A, TO-220.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"STripFET™ V","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"3V @ 250µA","Base Product Number":"STP60N","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"8.4mOhm @ 24A, 10V","Power Dissipation (Max)":"60W (Tc)","Supplier Device Package":"TO-220","Gate Charge (Qg) (Max) @ Vgs":"8.8 nC @ 5 V","Drain to Source Voltage (Vdss)":"30 V","Input Capacitance (Ciss) (Max) @ Vds":"1350 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"5V, 10V","Current - Continuous Drain (Id) @ 25°C":"48A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":null,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/4410a753e2de1b21a231873102b92568.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STP60N3LH5/alternatives.json"},"ai":{"faq":[{"question":"What is the Rds(on) of STP60N3LH5?","answer":"At 5 V gate drive the Rds(on) will be higher — the datasheet specifies the drive voltage range as 5 V to 10 V for the rated on-resistance."},{"question":"What is the Vgs threshold of STP60N3LH5?","answer":"The maximum gate threshold voltage is 3 V at a drain current of 250 µA. This logic-level threshold allows the MOSFET to be turned on fully by 5 V logic or a standard gate driver."},{"question":"What is the replacement for STP60N3LH5?","answer":"No official replacement part number is listed by STMicroelectronics for the STP60N3LH5. For a pin-compatible alternative in the same TO-220 footprint and 30 V / 48 A class, a cross-reference search against current STripFET parts or a parametric filter on Rds(on) and gate charge is the practical path. Sourcing through independent distribution remains the direct route for the original part."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STP60N3LH5","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STP60N3LH5 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}