{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STP60N043DM9","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STP60N043DM9","canonicalUrl":"https://icboms.com/stmicroelectronics/STP60N043DM9","factsUrl":"https://icboms.com/api/mcp/products/STP60N043DM9","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STP60N043DM9, N-Channel MOSFET, 600 V Vdss, 43 mOhm Rds(on) @ 28 A, 10 V, 56 A continuous drain current, TO-220-3 package, -55°C to 150°C junction temperature.","salesMarkdown":"## 600 V N-Channel MOSFET in TO-220 — switching power supply workhorse Key features include a gate charge of 78.6 nC at 10 V, input capacitance of 4675 pF at 400 V drain-source, and a maximum gate-source voltage of ±30 V. The drive voltage must be at least 10 V to achieve this specified on-resistance.","metaTitle":"STP60N043DM9 N-Channel MOSFET, 600 V, 43 mOhm, TO-220","metaDescription":"STP60N043DM9 N-Channel MOSFET from STMicroelectronics, 600 V drain-source, 43 mOhm Rds(on) at 28 A, 10 V gate drive, 56 A continuous drain current, -55°C to","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"-","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±30V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4.5V @ 250µA","Base Product Number":"STP60N","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"43mOhm @ 28A, 10V","Power Dissipation (Max)":"245W (Tc)","Supplier Device Package":"TO-220","Gate Charge (Qg) (Max) @ Vgs":"78.6 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"4675 pF @ 400 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"56A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$6.8760","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/a66e2c3898f1087125e506dc12dafe46.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STP60N043DM9/alternatives.json"},"ai":{"faq":[{"question":"Is STP60N043DM9 suitable for switching power supplies?","answer":"Yes, the 600 V drain-source rating, 43 mOhm Rds(on), and 78.6 nC gate charge make it well suited for hard-switched topologies in AC-DC converters, DC-DC converters, and power-factor-correction stages operating from high-voltage rails. The TO-220 package allows straightforward heatsinking for the 245 W power dissipation capability."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STP60N043DM9","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STP60N043DM9 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}