{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STP5NK40Z","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STP5NK40Z","canonicalUrl":"https://icboms.com/stmicroelectronics/STP5NK40Z","factsUrl":"https://icboms.com/api/mcp/products/STP5NK40Z","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics SuperMESH™ N-Channel MOSFET, STP5NK40Z, 400 V Vdss, 3 A Id, 1.8 Ω Rds(on) at 10 V, 17 nC Qg, TO-220-3 through-hole, -55°C to 150°C Tj.","salesMarkdown":"## 400 V N-channel MOSFET for offline power conversion STMicroelectronics has marked the STP5NK40Z obsolete. Buyers with an existing BOM line should qualify a replacement for new builds and plan for last-time-buy coverage on legacy service runs. The 400 V Vdss gives the designer 50–80 V of derating headroom for a 240 VAC offline rail after rectification and ripple, assuming a snubber-clamped flyback topology. The 3 A continuous current rating at 25°C case temperature must be derated per the thermal curve above 100°C case — at 100°C case the practical continuous current drops to roughly 2 A. The 1.8 Ω Rds(on) at 10 V gate drive means conduction losses of about 1.8 W at 1 A; the TO-220 package in still air with a small heatsink handles that, but at 3 A the loss hits 16 W, requiring a substantial heatsink or forced air. The 17 nC gate charge keeps the switching transition fast enough for 50–100 kHz operation; beyond that the Miller plateau stretches and switching losses climb.","metaTitle":"STP5NK40Z N-Channel MOSFET, 400 V, 3 A, TO-220-3","metaDescription":"STP5NK40Z N-Channel MOSFET from STMicroelectronics SuperMESH series. 400 V Vdss, 3 A Id, 1.8 Ω Rds(on), TO-220-3. Request quote for current availability.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"SuperMESH™","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±30V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4.5V @ 50µA","Base Product Number":"STP5N","Operating Temperature":"-55°C~150°C(TJ)","Rds On (Max) @ Id, Vgs":"1.8Ohm @ 1.5A, 10V","Power Dissipation (Max)":"45W (Tc)","Supplier Device Package":"TO-220","Gate Charge (Qg) (Max) @ Vgs":"17 nC @ 10 V","Drain to Source Voltage (Vdss)":"400 V","Input Capacitance (Ciss) (Max) @ Vds":"305 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"3A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":null,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/4a00794dd8d95d0d199ef50a5da23455.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STP5NK40Z/alternatives.json"},"ai":{"faq":[{"question":"What is a good replacement for STP5NK40Z?","answer":"A suitable replacement should be an N-channel MOSFET in a TO-220 package with a Vdss of at least 400 V, a continuous drain current of 3 A or higher, and an Rds(on) at 10 V gate drive that meets the conduction loss budget of the application. Candidates from the same SuperMESH family or from competing series (e.g., Infineon CoolMOS, onsemi SuperFET) should be evaluated for pin-compatibility and gate-drive requirements."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STP5NK40Z","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STP5NK40Z when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}