{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STP5N62K3","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STP5N62K3","canonicalUrl":"https://icboms.com/stmicroelectronics/STP5N62K3","factsUrl":"https://icboms.com/api/mcp/products/STP5N62K3","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics SuperMESH3™ series, N-Channel MOSFET, Through Hole, TO-220-3, 620 V drain-source, 4.2 A continuous drain at 25°C, 1.6 Ohm Rds(on) at 10 V, 70 W power dissipation.","salesMarkdown":"## 620 V SuperMESH3 N-channel in a TO-220 The STP5N62K3: The 26 nC typical total gate charge keeps switching losses manageable in flyback converters and offline power supplies up to about 70 W. The TO-220 through-hole package allows direct mounting to a heatsink for thermal management. ## Obsolete — plan for last-time-buy or replacement For new designs or volume production, a parametric alternative in the same SuperMESH3 family with a similar 620 V rating and TO-220 package should be evaluated. At 10 V gate drive, the 1.6 Ω maximum on-resistance translates to about 6.7 W conduction loss at the 4.2 A continuous current rating (I²R). With a 70 W package limit at the case, the thermal margin is adequate for most flyback and forward-converter designs where the MOSFET conducts for a fraction of the switching period.","metaTitle":"STP5N62K3 N-Channel MOSFET, 620 V, 4.2 A, TO-220","metaDescription":"STMicroelectronics STP5N62K3 SuperMESH3 N-channel MOSFET, 620 Vdss, 4.2 A, 1.6 Ohm Rds(on). TO-220 through-hole. Request quote.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"SuperMESH3™","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±30V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4.5V @ 50µA","Base Product Number":"STP5N","Operating Temperature":"-55°C~150°C(TJ)","Rds On (Max) @ Id, Vgs":"1.6Ohm @ 2.1A, 10V","Power Dissipation (Max)":"70W (Tc)","Supplier Device Package":"TO-220","Gate Charge (Qg) (Max) @ Vgs":"26 nC @ 10 V","Drain to Source Voltage (Vdss)":"620 V","Input Capacitance (Ciss) (Max) @ Vds":"680 pF @ 50 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"4.2A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":null,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/63489d28011183f11fc1c3e7c0905d24.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STP5N62K3/alternatives.json"},"ai":{"faq":[{"question":"What is the replacement for STP5N62K3?","answer":"STMicroelectronics has not published an official direct replacement for the STP5N62K3. A parametric search for a 620 V N-channel MOSFET in a TO-220 package with similar Rds(on) and gate charge will yield candidates from the same SuperMESH3 family. For a drop-in evaluation, compare the pin-compatible STP5NK60Z (600 V, 4.5 A, 1.5 Ω) — note the 20 V lower Vdss rating."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STP5N62K3","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STP5N62K3 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}