{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STP5N60M2","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STP5N60M2","canonicalUrl":"https://icboms.com/stmicroelectronics/STP5N60M2","factsUrl":"https://icboms.com/api/mcp/products/STP5N60M2","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STP5N60M2, MDmesh™ II Plus, N-Channel MOSFET, 600 V Vdss, 3.7 A Id, 1.4 Ohm Rds(on), 4.5 nC Qg, TO-220-3 through-hole.","salesMarkdown":"## 600 V N-channel MOSFET in the MDmesh II Plus family The TO-220-3 through-hole package allows direct mounting to a heatsink, which is expected for a device dissipating up to 45 W at the case. Input capacitance measures 165 pF at 100 V drain-source bias — a low figure that further reduces the drive burden and switching losses. The gate is rated to ±25 V maximum, providing margin against ringing in hard-switched topologies. Maximum junction temperature is 150 °C, and the device is rated for 45 W power dissipation at the case. For a 600 V, 3.7 A part in this package, the thermal path through the tab to a heatsink is the primary design consideration — the junction-to-case thermal resistance will determine whether the dissipation budget fits the application's ambient temperature.","metaTitle":"STP5N60M2 N-Channel MOSFET, 600V, 3.7A, TO-220","metaDescription":"STP5N60M2 N-channel 600V MOSFET, 3.7A continuous drain, 1.4 Ohm Rds(on), 4.5 nC gate charge. MDmesh II Plus series in TO-220 package.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™ II Plus","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Base Product Number":"STP5N60","Operating Temperature":"150°C (TJ)","Rds On (Max) @ Id, Vgs":"1.4Ohm @ 1.85A, 10V","Power Dissipation (Max)":"45W (Tc)","Supplier Device Package":"TO-220","Gate Charge (Qg) (Max) @ Vgs":"4.5 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"165 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"3.7A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.5200","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/15d0a90ffdcb76c8a4473fa756df0f2b.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STP5N60M2/alternatives.json"},"ai":{"faq":[{"question":"What is the Vgs(th) of the STP5N60M2?","answer":"The maximum gate threshold voltage is 4 V at a drain current of 250 µA. This means the device starts conducting with a gate-to-source voltage above 4 V; the recommended drive voltage for achieving the specified Rds(on) is 10 V."},{"question":"Is the STP5N60M2 RoHS compliant?","answer":"The evidence does not explicitly state RoHS compliance status. For a definitive answer, the RoHS certificate or the manufacturer's declaration should be reviewed — this is typically available from the distributor at quote time."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STP5N60M2","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STP5N60M2 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}