{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STP5N120","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STP5N120","canonicalUrl":"https://icboms.com/stmicroelectronics/STP5N120","factsUrl":"https://icboms.com/api/mcp/products/STP5N120","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STP5N120, SuperMESH™ N-Channel MOSFET, 1200 Vdss, 4.7 A Id, 3.5 Ohm Rds(on) @ 2.3 A, 10 V, 160 W, TO-220-3, -55 to 150 °C.","salesMarkdown":"The STP5N120: 1200 V drain-source breakdown voltage. TO-220-3 through-hole package. Plan on a generous heatsink or forced airflow if operating near the 160 W power dissipation ceiling. Input capacitance of 120 pF at 25 V Vds is low, which helps keep switching losses in check. The ±30 V maximum gate-source voltage gives reasonable margin for gate-drive overshoot, but a gate clamp zener is still recommended for robust designs. No last-time-buy date or official successor is recorded in the lifecycle data. This part is available only through the independent surplus and broker channel. Any stock you find is likely from earlier production date codes — verify date-code authenticity and condition before committing to a BOM line. For a new design, look at current 1200 V SuperMESH or MDmesh parts in the same TO-220 footprint; for a repair or retrofit, source verified surplus against an RFQ.","metaTitle":"ST STP5N120 N-Channel MOSFET, 1200 V, 4.7 A, TO-220","metaDescription":"STMicroelectronics STP5N120 SuperMESH N-channel MOSFET, 1200 Vdss, 4.7 A Id, 3.5 Ohm Rds(on), TO-220-3. Obsolete.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"SuperMESH™","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±30V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"5V @ 100µA","Base Product Number":"STP5N","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"3.5Ohm @ 2.3A, 10V","Power Dissipation (Max)":"160W (Tc)","Supplier Device Package":"TO-220","Gate Charge (Qg) (Max) @ Vgs":"55 nC @ 10 V","Drain to Source Voltage (Vdss)":"1200 V","Input Capacitance (Ciss) (Max) @ Vds":"120 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"4.7A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$9.8400","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/361d19f7ae086b85518a5ed00d3b28e9.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the replacement for STP5N120?","answer":"For new designs, consider a current 1200 V-rated N-channel MOSFET from ST's SuperMESH or MDmesh families in the same TO-220 package, such as the STP5NK100Z or STP4N120 — but verify pin compatibility and parametric fit against your specific drive and load conditions."},{"question":"What are the specifications of STP5N120?","answer":"Gate charge is 55 nC at 10 V, input capacitance 120 pF at 25 V. It comes in a TO-220-3 through-hole package and operates over -55 to 150 °C junction temperature."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STP5N120","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STP5N120 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}