{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STP5N105K5","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STP5N105K5","canonicalUrl":"https://icboms.com/stmicroelectronics/STP5N105K5","factsUrl":"https://icboms.com/api/mcp/products/STP5N105K5","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics MDmesh™ K5 series, N-Channel MOSFET, 1050 V drain-to-source voltage, 3 A continuous drain current at 25°C, 3.5 Ω on-resistance at 10 V gate drive, TO-220-3 through-hole package, -55 to 150 °C junction temperature range.","salesMarkdown":"## 1050 V N-channel MOSFET for harsh-environment power conversion Its junction temperature range of -55 to 150 °C qualifies it for military, avionics, downhole drilling, and other extended-temperature environments where commercial-grade parts would derate or fail. The 10 V gate-drive voltage is required to achieve the specified maximum on-resistance; driving at lower voltages, such as 5 V, will roughly double the Rds(on), so the gate supply rail must be designed for at least 10 V. Total gate charge is 12.5 nC at 10 V, and input capacitance is 210 pF at 100 V drain bias — both figures are modest, meaning the gate driver does not need high peak current, and switching losses at moderate frequencies (tens of kHz) will be manageable. The maximum gate-to-source voltage rating of ±30 V provides margin against ringing on long gate traces. ## Thermal design and mounting The junction-to-case thermal path is the primary design constraint; the datasheet's thermal resistance figures (not repeated here) should be used to size the heatsink. The through-hole mount is straightforward for manual assembly or wave-solder lines, and the package is compatible with standard TO-220 clips or screw-mount hardware. For BOM resilience, the MDmesh K5 family includes other voltage and current variants that share the same TO-220 footprint, but no pin-compatible second source from another manufacturer is listed in the official cross-reference data.","metaTitle":"STP5N105K5 N-Channel MOSFET, 1050 V, 3 A, TO-220-3","metaDescription":"STP5N105K5 N-channel MDmesh K5 MOSFET, 1050 V Vdss, 3 A Id, 3.5 Ω Rds(on), -55 to 150 °C, TO-220-3. Active lifecycle.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™ K5","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±30V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"5V @ 100µA","Base Product Number":"STP5N105","Operating Temperature":"-55°C~150°C(TJ)","Rds On (Max) @ Id, Vgs":"3.5Ohm @ 1.5A, 10V","Power Dissipation (Max)":"85W (Tc)","Supplier Device Package":"TO-220","Gate Charge (Qg) (Max) @ Vgs":"12.5 nC @ 10 V","Drain to Source Voltage (Vdss)":"1050 V","Input Capacitance (Ciss) (Max) @ Vds":"210 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"3A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.8700","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/0f564fb1b7f9916a9b61949ba23cd49b.pdf","sourceUrl":null},"ai":{"faq":[],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STP5N105K5","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STP5N105K5 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}