{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STP57N65M5","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STP57N65M5","canonicalUrl":"https://icboms.com/stmicroelectronics/STP57N65M5","factsUrl":"https://icboms.com/api/mcp/products/STP57N65M5","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics MDmesh™ V, N-Channel MOSFET, 650V Vdss, 42A Id, 63mOhm Rds(on) @ 10V, 98nC Qg, TO-220-3 through-hole, 150°C Tj.","salesMarkdown":"STP57N65M5 total gate charge is 98 nC at 10 V. Input capacitance is 4200 pF at 100 V drain bias. ## Thermal and mechanical envelope Maximum power dissipation is 250 W at case temperature, with the junction rated to 150 °C. The TO-220-3 through-hole package (supplier device package TO-220) mounts into a standard 0.100-inch pitch PCB pattern; the metal tab is the drain node and must be heatsunk for any load above a few watts. It is ROHS3 compliant.","metaTitle":"STP57N65M5 MOSFET N-Ch 650V 42A TO-220, 63mOhm Rds(on)","metaDescription":"STP57N65M5 N-channel 650V 42A MOSFET in TO-220, 63mOhm Rds(on) at 10V. Active production, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"MDmesh™ V","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™ V","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"5V @ 250µA","Base Product Number":"STP57","Operating Temperature":"150°C (TJ)","Rds On (Max) @ Id, Vgs":"63mOhm @ 21A, 10V","Power Dissipation (Max)":"250W (Tc)","Supplier Device Package":"TO-220","Gate Charge (Qg) (Max) @ Vgs":"98 nC @ 10 V","Drain to Source Voltage (Vdss)":"650 V","Input Capacitance (Ciss) (Max) @ Vds":"4200 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"42A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$10.8800","priceTiers":[{"qty":1,"price":"$10.88000","currency":"USD"},{"qty":10,"price":"$9.58600","currency":"USD"},{"qty":100,"price":"$8.29070","currency":"USD"},{"qty":500,"price":"$7.51348","currency":"USD"},{"qty":1000,"price":"$6.89167","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/6b1a10fa68a82e5e771bc2204cac3d66.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STP57N65M5/alternatives.json"},"ai":{"faq":[{"question":"What is the exact Rds(on) for STP57N65M5 at 10V Vgs?","answer":"The maximum Rds(on) is 63 mOhm at 10 V gate drive with 21 A drain current. This is the worst-case figure at 25 °C junction temperature; the actual on-resistance increases with temperature per the normalised curve in the datasheet."},{"question":"What is the maximum Vgs and power dissipation for STP57N65M5?","answer":"Maximum gate-to-source voltage is ±25 V. Maximum power dissipation is 250 W at case temperature, with the junction temperature rated to 150 °C."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STP57N65M5","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STP57N65M5 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}