{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STP52N25M5","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STP52N25M5","canonicalUrl":"https://icboms.com/stmicroelectronics/STP52N25M5","factsUrl":"https://icboms.com/api/mcp/products/STP52N25M5","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STP52N25M5, N-Channel MDmesh V MOSFET, 250 Vdss, 28 A continuous drain, 65 mOhm Rds(on) at 10 V, 47 nC gate charge, TO-220-3 through-hole, -55 to 150 °C junction.","salesMarkdown":"## 250 V, 28 A N-channel — MDmesh V in a TO-220 The STMicroelectronics STP52N25M5 is a 250 V, 28 A N-channel power MOSFET built on the MDmesh™ V technology — a vertical multi-drain architecture that cuts the on-resistance per unit area versus conventional planar or standard trench FETs. Gate charge is 47 nC at 10 V, which keeps the driver-side energy modest for a 250 V device — a 1 A gate-driver can switch it in under 50 ns if the loop inductance is tight. ## Junction range from -55 to 150 °C — what it buys you The -55 to 150 °C junction temperature rating is the full military-grade span, not the narrower industrial or commercial window. That means the STP52N25M5 can be specified into avionics power supplies, satellite DC-DC converters, downhole instrumentation, and engine-bay auxiliary converters where the ambient sees -40 °C cold-soak and 125 °C soak-back. The 150 °C absolute maximum junction also gives headroom for transient overloads in a 105 °C ambient — derate the 28 A continuous rating per the thermal curve, but the silicon itself is qualified for the temperature extremes. The STP52N25M5 carries an official obsolete product status. That means STMicroelectronics no longer manufactures it; no last-time-buy window remains open. Procurement for this order code moves entirely to the independent distribution channel — surplus inventory, new-old-stock, and broker-sourced lots. Every unit we supply is verified for date-code consistency, marking integrity, and electrical sample testing before shipment; the laser etch on the TO-220 body is checked against ST's known font and plant codes. No authorized-distributor pipeline exists for this part, so provenance documentation and lot traceability are the key quality controls. ## Package and mounting — through-hole TO-220 The three-lead form factor is a standard power-semiconductor footprint — 2.54 mm pitch, metal tab for heatsink attachment, and a mounting hole for a screw or clip. The tube shipping medium is the factory-standard for through-hole devices; no tape-and-reel option is listed for this part. MSL 1 out of the bag — no bake required before reflow if the pouch seal is intact.","metaTitle":"STP52N25M5 N-Channel MOSFET, 250V 28A TO-220, 65mOhm","metaDescription":"STP52N25M5 MDmesh V N-channel MOSFET: 250 Vdss, 28 A Id, 65 mOhm Rds(on) at 10 V. TO-220-3, -55 to 150 °C.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™ V","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"5V @ 100µA","Base Product Number":"STP52N","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"65mOhm @ 14A, 10V","Power Dissipation (Max)":"110W (Tc)","Supplier Device Package":"TO-220","Gate Charge (Qg) (Max) @ Vgs":"47 nC @ 10 V","Drain to Source Voltage (Vdss)":"250 V","Input Capacitance (Ciss) (Max) @ Vds":"1770 pF @ 50 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"28A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$4.1500","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/0451d9d0a99417f263e1512a6cac23d2.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) of the STP52N25M5?","answer":"This is the on-resistance figure used for conduction-loss calculations in a switching converter or load-switch application."},{"question":"What is the equivalent or replacement for STP52N25M5?","answer":"No official successor or cross-reference is listed by STMicroelectronics for the STP52N25M5. A functionally similar 250 V N-channel MOSFET in a TO-220 package with comparable Rds(on) and gate charge should be evaluated on a case-by-case basis — parametric matching for your specific switching frequency, drive voltage, and thermal budget is essential before substituting."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STP52N25M5","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STP52N25M5 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}