{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STP50N65DM6","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STP50N65DM6","canonicalUrl":"https://icboms.com/stmicroelectronics/STP50N65DM6","factsUrl":"https://icboms.com/api/mcp/products/STP50N65DM6","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics MDmesh™ N-Channel MOSFET, STP50N65DM6, 650 V Vdss, 33 A continuous drain, 91 mΩ Rds(on) at 10 V, TO-220-3 through-hole package, -55°C to 150°C operating temperature.","salesMarkdown":"At 16.5 A drain current and 10 V gate drive, the 91 mΩ maximum on-resistance translates to roughly 25 W conduction loss at that current — well within the 250 W power dissipation rating at the case. For a typical 500 W PFC boost stage running at 8 A average, the loss drops to about 6 W, leaving thermal headroom for the heatsink.","metaTitle":"STP50N65DM6 N-Channel MOSFET, 650 V, 33 A, MDmesh™, TO-220","metaDescription":"STP50N65DM6 N-channel 650 V MOSFET from STMicroelectronics MDmesh™ series. 91 mΩ Rds(on) at 10 V, 33 A continuous drain, TO-220 package.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4.75V @ 250µA","Base Product Number":"STP50","Operating Temperature":"-55°C~150°C(TJ)","Rds On (Max) @ Id, Vgs":"91mOhm @ 16.5A, 10V","Power Dissipation (Max)":"250W (Tc)","Supplier Device Package":"TO-220","Gate Charge (Qg) (Max) @ Vgs":"52.5 nC @ 10 V","Drain to Source Voltage (Vdss)":"650 V","Input Capacitance (Ciss) (Max) @ Vds":"2300 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"33A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$8.0900","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/b3a1a8bc7792d5330733528faad6ac75.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) of STP50N65DM6?","answer":"At lower gate voltages the resistance increases significantly, so the design should supply a 10 V gate drive rail to achieve the rated Rds(on)."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STP50N65DM6","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STP50N65DM6 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}