{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STP3NK80Z","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STP3NK80Z","canonicalUrl":"https://icboms.com/stmicroelectronics/STP3NK80Z","factsUrl":"https://icboms.com/api/mcp/products/STP3NK80Z","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics SuperMESH N-Channel MOSFET, 800V Vdss, 2.5A Id, 4.5 Ohm Rds(on) @ 1.25A, 10V, 70W, TO-220-3, -55°C to 150°C.","salesMarkdown":"## 800 V SuperMESH for offline flyback and PFC stages The STP3NK80Z: The through-hole TO-220 package allows easy heatsink attachment, and the 70 W power dissipation ceiling at case temperature provides enough headroom for a 30–50 W offline supply with adequate thermal management. ## Gate drive and switching behaviour The gate threshold voltage maximum is 4.5 V at 50 µA drain current, which means a 10 V gate drive is the recommended operating point to achieve the specified 4.5 Ohm Rds(on). Driving the gate with 5 V logic from a 3.3 V microcontroller would leave the MOSFET in the linear region with significantly higher conduction loss. The ±30 V maximum gate-source rating gives margin against ringing on the gate node in layouts with long PCB traces. The STP3NK80Z is supplied in the standard TO-220-3 through-hole package, with the tab connected to the drain. For a 50 W output flyback running at 65 kHz, expect the junction temperature to stay within the 150°C absolute maximum when the heatsink thermal resistance is kept below 4°C/W.","metaTitle":"STP3NK80Z N-Channel MOSFET, 800V 2.5A TO-220","metaDescription":"STMicroelectronics STP3NK80Z SuperMESH N-channel MOSFET, 800V Vdss, 2.5A Id, 4.5 Ohm Rds(on) at 10V. Active production, TO-220 package.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"SuperMESH™","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±30V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4.5V @ 50µA","Base Product Number":"STP3NK80","Operating Temperature":"-55°C~150°C(TJ)","Rds On (Max) @ Id, Vgs":"4.5Ohm @ 1.25A, 10V","Power Dissipation (Max)":"70W (Tc)","Supplier Device Package":"TO-220","Gate Charge (Qg) (Max) @ Vgs":"19 nC @ 10 V","Drain to Source Voltage (Vdss)":"800 V","Input Capacitance (Ciss) (Max) @ Vds":"485 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"2.5A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.8900","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/2ea3a6e57d4cc77aebcb3b0ba906dd31.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STP3NK80Z/alternatives.json"},"ai":{"faq":[{"question":"What is the Rds(on) of STP3NK80Z at 10V?","answer":"The maximum on-resistance is 4.5 Ohm at a drain current of 1.25 A with 10 V gate drive. This value is specified at 25°C junction temperature; expect the resistance to increase by roughly 50% at 125°C junction, which must be factored into the worst-case conduction loss calculation."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STP3NK80Z","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STP3NK80Z when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}