{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STP3NK60Z","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STP3NK60Z","canonicalUrl":"https://icboms.com/stmicroelectronics/STP3NK60Z","factsUrl":"https://icboms.com/api/mcp/products/STP3NK60Z","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics SuperMESH™ STP3NK60Z, N-Channel MOSFET, 600 V Vdss, 2.4 A Id, 3.6 Ω Rds(on) @ 1.2 A, TO-220-3 through-hole, -55°C to 150°C junction.","salesMarkdown":"## 600 V N-channel in a TO-220 — where it fits The STP3NK60Z is a 600 V, 2.4 A N-channel MOSFET from ST's SuperMESH™ series, built in standard TO-220-3 through-hole. It targets offline switching applications — flyback converters, auxiliary power supplies, and PFC stages — where the 600 V drain-source rating provides adequate derating for universal-input rectified DC (up to 400 V nominal). ## Gate charge and capacitance — switching efficiency With a typical gate charge of 11.8 nC at 10 V and input capacitance of 311 pF at 25 V drain bias, this MOSFET is designed for moderate-frequency switching — think 60–100 kHz in a flyback or 40–70 kHz in a PFC boost. The low Qg means the gate driver sees a light reactive load, reducing driver losses and allowing smaller bootstrap capacitors. The Ciss figure also helps keep switching edges clean; expect dV/dt slew rates that are manageable without aggressive snubbing in a well-laid-out board. The STP3NK60Z carries a lifecycle status of Not Recommended for New Design (NRND). There is no official L* successor listed in the record, so the replacement decision falls to parametric fit: a comparable 600 V N-channel with similar or lower Rds(on) and Qg, such as the STx3NK60Z family siblings, is the natural cross-shop. The TO-220 package with its metal tab allows straightforward heatsinking — a simple clip-on or screw-mounted heatsink keeps the junction within limits at the 45 W maximum dissipation. Through-hole mounting suits point-to-point wiring on prototype boards or production runs where wave soldering is the primary assembly method.","metaTitle":"STP3NK60Z N-Channel MOSFET, 600V, 2.4A, SuperMESH™","metaDescription":"STP3NK60Z N-Channel MOSFET, 600V Vdss, 2.4A Id, 3.6Ω Rds(on). SuperMESH™ series, TO-220-3. Request quote.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"NRND","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"SuperMESH™","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±30V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3","Product Status":"Not For New Designs","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4.5V @ 50µA","Base Product Number":"STP3NK60","Operating Temperature":"-55°C~150°C(TJ)","Rds On (Max) @ Id, Vgs":"3.6Ohm @ 1.2A, 10V","Power Dissipation (Max)":"45W (Tc)","Supplier Device Package":"TO-220","Gate Charge (Qg) (Max) @ Vgs":"11.8 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"311 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"2.4A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.5900","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/350a7b814489e1c147336981200bc8b3.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STP3NK60Z/alternatives.json"},"ai":{"faq":[{"question":"Is the STP3NK60Z obsolete?","answer":"It is not fully discontinued, but ST advises against using it in new designs. Existing production can continue sourcing it through the independent channel."},{"question":"What is the STP3NK60Z replacement?","answer":"The replacement decision depends on your specific current and Rds(on) requirements — a parametric search for an active 600 V N-channel MOSFET in TO-220 with similar or lower on-resistance and gate charge is the practical approach."},{"question":"What are the STP3NK60Z specifications?","answer":"It has 11.8 nC typical gate charge and 311 pF input capacitance. The operating junction temperature range is -55°C to 150°C."},{"question":"What is the maximum Vds of the STP3NK60Z?","answer":"The maximum drain-to-source voltage (Vdss) is 600 V."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STP3NK60Z","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STP3NK60Z when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}