{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STP3NK100Z","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STP3NK100Z","canonicalUrl":"https://icboms.com/stmicroelectronics/STP3NK100Z","factsUrl":"https://icboms.com/api/mcp/products/STP3NK100Z","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics SuperMESH™ N-Channel MOSFET, 1000 V Vdss, 2.5 A continuous drain, 6 Ohm Rds(on) at 10 V, 18 nC gate charge, TO-220-3 through-hole package.","salesMarkdown":"## High-voltage N-channel MOSFET in TO-220 The STMicroelectronics STP3NK100Z is a 1000 V N-channel MOSFET from the SuperMESH™ series, built with metal-oxide technology and housed in a TO-220-3 through-hole package. The 18 nC typical gate charge keeps switching losses manageable in hard-switched topologies like flyback converters and auxiliary power supplies. ## 1000 V blocking voltage and conduction loss budget The 1000 V drain-source rating gives this part headroom for universal-input off-line converters where the reflected voltage plus leakage spike can exceed 800 V. The 6 Ohm on-resistance at 10 V drive means conduction loss at 1.25 A is about 9.4 W — factor that into the heatsink selection against the 90 W package limit. Gate threshold is specified at 4.5 V maximum with 50 µA drain current, so a 10 V gate drive is needed to achieve the rated Rds(on); logic-level drive at 5 V will leave significant margin on the table.","metaTitle":"STP3NK100Z N-Channel MOSFET, 1000 V, 2.5 A, TO-220","metaDescription":"STP3NK100Z N-Channel SuperMESH MOSFET, 1000 V Vdss, 2.5 A continuous drain, 6 Ohm Rds(on) at 10 V.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"SuperMESH™","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±30V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4.5V @ 50µA","Base Product Number":"STP3N","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"6Ohm @ 1.25A, 10V","Power Dissipation (Max)":"90W (Tc)","Supplier Device Package":"TO-220","Gate Charge (Qg) (Max) @ Vgs":"18 nC @ 10 V","Drain to Source Voltage (Vdss)":"1000 V","Input Capacitance (Ciss) (Max) @ Vds":"601 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"2.5A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.7600","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/9b0b88de450d7409fb8e543bde8d8162.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) of STP3NK100Z?","answer":"Maximum Rds(on) is 6 Ohm at 1.25 A drain current with 10 V gate drive. At lower gate voltages the on-resistance increases significantly — a 10 V drive rail is recommended to achieve the rated value."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STP3NK100Z","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STP3NK100Z when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}