{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STP3NB100","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STP3NB100","canonicalUrl":"https://icboms.com/stmicroelectronics/STP3NB100","factsUrl":"https://icboms.com/api/mcp/products/STP3NB100","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics PowerMESH™ N-channel MOSFET, STP3NB100, 1000 V drain-source, 3 A continuous drain, 6 Ohm Rds(on) at 10 V, TO-220-3 through-hole package.","salesMarkdown":"## 1000 V N-channel PowerMESH MOSFET in TO-220 This is a through-hole device in a TO-220-3 package, designed for high-voltage switching applications such as offline power supplies, AC-DC converters, and lighting ballasts where a single MOSFET handles the primary-side switching. ## Rds(on) and gate drive — what to expect With a gate threshold voltage of 4 V maximum at 250 µA, a 10 V drive is the recommended rail to fully enhance the channel and achieve the rated on-resistance. Sourcing is through the independent surplus and broker channel. ## Thermal and power handling The device is rated for 100 W power dissipation at the case, with a maximum junction temperature of 150°C.","metaTitle":"STP3NB100 N-Channel Power MOSFET, 1000 V, 3 A, TO-220","metaDescription":"STMicroelectronics STP3NB100 PowerMESH N-channel MOSFET: 1000 V Vdss, 3 A Id, 6 Ohm Rds(on), TO-220.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"PowerMESH™","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±30V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Base Product Number":"STP3N","Operating Temperature":"150°C (TJ)","Rds On (Max) @ Id, Vgs":"6Ohm @ 1.5A, 10V","Power Dissipation (Max)":"100W (Tc)","Supplier Device Package":"TO-220","Gate Charge (Qg) (Max) @ Vgs":"30 nC @ 10 V","Drain to Source Voltage (Vdss)":"1000 V","Input Capacitance (Ciss) (Max) @ Vds":"700 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"3A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$3.9800","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/92db2800c5c992448a89fc6e8604f464.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STP3NB100/alternatives.json"},"ai":{"faq":[{"question":"What is the Rds(on) of STP3NB100?","answer":"The maximum on-resistance is 6 Ohm at a gate-source voltage of 10 V and a drain current of 1.5 A. This is the figure to use for conduction loss calculations at full enhancement."},{"question":"What is the Vgs(th) of STP3NB100?","answer":"The maximum gate threshold voltage is 4 V at a drain current of 250 µA. A 10 V gate drive is specified for the rated Rds(on)."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STP3NB100","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STP3NB100 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}