{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STP3N150","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STP3N150","canonicalUrl":"https://icboms.com/stmicroelectronics/STP3N150","factsUrl":"https://icboms.com/api/mcp/products/STP3N150","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics PowerMESH™ series, STP3N150, N-Channel MOSFET, 1500 V drain-source voltage, 2.5 A continuous drain current, 9 Ohm Rds(on) at 10 V gate drive, 140 W power dissipation, TO-220-3 through-hole package.","salesMarkdown":"## 1500 V N-Channel MOSFET in a TO-220 The STP3N150 is a 1500 V N-channel PowerMESH MOSFET from STMicroelectronics in a TO-220 through-hole package. With a continuous drain current of 2.5 A at 25°C case temperature and a maximum on-resistance of 9 Ohm at 1.3 A with 10 V gate drive, this part targets high-voltage power conversion applications where primary-side switching and flyback topologies are common. ## Gate drive and switching considerations Input capacitance is 939 pF at 25 V drain-source — this is the Miller plateau region the driver must charge. The ±30 V maximum gate-source rating provides good noise margin in noisy power environments, but the gate threshold is specified at 5 V maximum with 250 µA drain current, so a 10 V gate drive (as used for the Rds(on) spec) is recommended to fully enhance the channel and minimize conduction losses. ## Thermal and mounting In a TO-220 package, the metal tab must be soldered or clamped to a heatsink with thermal compound — the tab is electrically connected to the drain, so an insulating pad or mica washer is needed if the heatsink is grounded. Operating temperature is specified as 150°C junction, which covers most industrial environments but requires derating above 25°C case temperature.","metaTitle":"STP3N150 PowerMESH N-Ch MOSFET, 1500V, 2.5A, TO-220","metaDescription":"STP3N150 N-channel PowerMESH MOSFET, 1500V Vdss, 2.5A Id, 9 Ohm Rds(on), 140W dissipation, TO-220 package.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"PowerMESH™","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±30V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"5V @ 250µA","Base Product Number":"STP3N150","Operating Temperature":"150°C (TJ)","Rds On (Max) @ Id, Vgs":"9Ohm @ 1.3A, 10V","Power Dissipation (Max)":"140W (Tc)","Supplier Device Package":"TO-220","Gate Charge (Qg) (Max) @ Vgs":"29.3 nC @ 10 V","Drain to Source Voltage (Vdss)":"1500 V","Input Capacitance (Ciss) (Max) @ Vds":"939 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"2.5A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$5.0200","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/915bff357004759200fa000a390948f1.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the STP3N150 Rds on?","answer":"The maximum on-resistance is 9 Ohm at 1.3 A drain current with 10 V gate drive. This is the conduction loss figure to use for your thermal calculations at rated current."},{"question":"What is the STP3N150 maximum drain current?","answer":"The continuous drain current is rated at 2.5 A at 25°C case temperature. This is the thermal limit — derate for higher case temperatures and pulsed operation may allow higher peak currents within the SOA."},{"question":"What is the STP3N150 power dissipation?","answer":"The maximum power dissipation is 140 W at case temperature. This is the package limit assuming the TO-220 tab is held at 25°C — your heatsink design must keep the case temperature low enough to stay within this limit for your actual load."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STP3N150","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STP3N150 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}