{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STP38N65M5","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STP38N65M5","canonicalUrl":"https://icboms.com/stmicroelectronics/STP38N65M5","factsUrl":"https://icboms.com/api/mcp/products/STP38N65M5","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STP38N65M5, N-Channel MOSFET, MDmesh™ V, 650 V Vdss, 30 A Id, 95 mOhm Rds(on) @ 15 A, 10 V, 71 nC Qg, TO-220-3, Through Hole.","salesMarkdown":"## 650 V, 30 A N-channel in TO-220 — MDmesh V generation At full rated current of 30 A, the I²R loss at 25°C junction temperature would be about 85 W, but the 190 W maximum power dissipation at the case (Tc) provides headroom when properly heatsunk. The drive voltage of 10 V is specified for achieving the lowest Rds(on); operation at lower gate voltages will increase on-resistance significantly. ## Gate charge and switching — driver selection cue With a total gate charge of 71 nC at 10 V, the STP38N65M5 demands a gate driver capable of sourcing and sinking that charge quickly to achieve fast switching transitions. The input capacitance of 3000 pF at 100 V Vds gives a rough estimate of the Miller plateau charge. For a 100 kHz switching frequency, the gate drive power loss is approximately Qg × Vgs × fsw = 71 nC × 10 V × 100 kHz = 71 mW, which is manageable for most integrated drivers. The ±25 V maximum gate-source voltage allows some margin for ringing, but a gate resistor is recommended to damp oscillations. The base product number STP38 covers a family of devices; the M5 suffix indicates the MDmesh V generation.","metaTitle":"STP38N65M5 N-Channel MOSFET, 650 V, 30 A, TO-220","metaDescription":"STP38N65M5 N-Channel MOSFET from STMicroelectronics MDmesh V series. 650 V Vdss, 30 A Id, 95 mOhm Rds(on). Active production.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™ V","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"5V @ 250µA","Base Product Number":"STP38","Operating Temperature":"150°C(TJ)","Rds On (Max) @ Id, Vgs":"95mOhm @ 15A, 10V","Power Dissipation (Max)":"190W (Tc)","Supplier Device Package":"TO-220","Gate Charge (Qg) (Max) @ Vgs":"71 nC @ 10 V","Drain to Source Voltage (Vdss)":"650 V","Input Capacitance (Ciss) (Max) @ Vds":"3000 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"30A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$5.9600","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/1b041712944b9fa2612e07ae1b2810dc.pdf","sourceUrl":null},"ai":{"faq":[],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STP38N65M5","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STP38N65M5 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}