{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STP36N60M6","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STP36N60M6","canonicalUrl":"https://icboms.com/stmicroelectronics/STP36N60M6","factsUrl":"https://icboms.com/api/mcp/products/STP36N60M6","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics MDmesh M6 series, N-Channel MOSFET, STP36N60M6, 600V Vdss, 30A Id, 99mOhm Rds(on) at 15A, TO-220-3, -55°C to 150°C.","salesMarkdown":"That figure is specified at 25°C junction; expect it to roughly double at 125°C, so a heatsink sized for the worst-case conduction loss at full load is non-negotiable. Gate charge totals 44.3 nC at 10 V — a moderate number that a standard 1 A gate driver can switch at 100 kHz without excessive cross-conduction losses. The input capacitance of 1960 pF at 100 V Vds gives the designer a handle on the Miller plateau duration during hard-switching events. ## Through-hole package and temperature grade Housed in a TO-220-3 through-hole package, the part suits designs where board-level rework or high-power dissipation demands a metal tab heatsink.","metaTitle":"STP36N60M6 N-Channel MOSFET, 600V 30A TO-220, MDmesh M6","metaDescription":"STP36N60M6 N-channel 600V 30A MOSFET in TO-220. Rds(on) 99mOhm at 15A. Active production, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"MDmesh™ M6","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™ M6","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4.75V @ 250µA","Base Product Number":"STP36","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"99mOhm @ 15A, 10V","Power Dissipation (Max)":"208W (Tc)","Supplier Device Package":"TO-220","Gate Charge (Qg) (Max) @ Vgs":"44.3 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"1960 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"30A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$6.6600","priceTiers":[{"qty":1,"price":"$6.66000","currency":"USD"},{"qty":10,"price":"$5.58800","currency":"USD"},{"qty":100,"price":"$4.52060","currency":"USD"},{"qty":500,"price":"$4.01834","currency":"USD"},{"qty":1000,"price":"$3.44071","currency":"USD"},{"qty":2000,"price":"$3.23979","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/1899852318fa47dc502508a27d724450.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STP36N60M6/alternatives.json"},"ai":{"faq":[{"question":"What is the Rds(on) of STP36N60M6?","answer":"The maximum Rds(on) is 99 mOhm at 15 A drain current with 10 V gate drive, specified at 25°C junction temperature."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STP36N60M6","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STP36N60M6 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}