{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STP36N55M5","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STP36N55M5","canonicalUrl":"https://icboms.com/stmicroelectronics/STP36N55M5","factsUrl":"https://icboms.com/api/mcp/products/STP36N55M5","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STP36N55M5, N-Channel MOSFET, MDmesh™ V series, 550 Vdss, 33 A continuous drain, 80 mOhm Rds(on) at 10 V, 62 nC gate charge, TO-220-3 through-hole, 150°C junction temperature.","salesMarkdown":"## Gate drive and switching — 62 nC at 10 V Gate charge of 62 nC at 10 V is moderate for a 550 V, 33 A device. A typical gate-drive IC or PWM controller output can switch it in the tens of nanoseconds with a reasonable drive resistor. The 2670 pF input capacitance at 100 V drain-source confirms the gate-drive current needed for a given rise time — budget around 0.5 A peak drive for 50 ns edges. ## Through-hole TO-220 — field-swappable The TO-220-3 package with through-hole mounting is a field-serviceable form factor. No hot-air station needed — a soldering iron and a desoldering pump or wick is enough to swap it on site. The tab is the drain, and the gate and source pins are clearly marked on the package face; orientation is unambiguous even under a work light in a parking lot. STMicroelectronics lists the STP36N55M5 as obsolete. If you are filling a BOM line for a legacy design, this is a broker-sourced part; for a new design, look at ST's current MDmesh series for a pin-compatible replacement.","metaTitle":"STP36N55M5 N-Channel MOSFET, 550 V, 33 A, MDmesh V, TO-220","metaDescription":"STP36N55M5 N-channel MOSFET from STMicroelectronics MDmesh V series. 550 Vdss, 33 A continuous drain, 80 mOhm Rds(on) at 10 V. TO-220-3 through-hole.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™ V","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"5V @ 250µA","Base Product Number":"STP36N","Operating Temperature":"150°C (TJ)","Rds On (Max) @ Id, Vgs":"80mOhm @ 16.5A, 10V","Power Dissipation (Max)":"190W (Tc)","Supplier Device Package":"TO-220","Gate Charge (Qg) (Max) @ Vgs":"62 nC @ 10 V","Drain to Source Voltage (Vdss)":"550 V","Input Capacitance (Ciss) (Max) @ Vds":"2670 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"33A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$7.3000","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/e6fdf16e8064b9eeb452b24ba7ed09dd.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) of STP36N55M5?","answer":"At lower gate voltages the Rds(on) will be higher — this part is designed for 10 V drive."},{"question":"What is the mounting type of STP36N55M5?","answer":"Through-hole mounting in a TO-220-3 package. It can be replaced with basic soldering tools on site."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STP36N55M5","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STP36N55M5 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}