{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STP35N65M5","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STP35N65M5","canonicalUrl":"https://icboms.com/stmicroelectronics/STP35N65M5","factsUrl":"https://icboms.com/api/mcp/products/STP35N65M5","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STP35N65M5, N-Channel MOSFET, MDmesh™ V series, 650 V Vdss, 27 A Id, 98 mOhm Rds(on) at 10 V, TO-220-3, Through Hole.","salesMarkdown":"## 650 V, 27 A N-channel MDmesh V — now obsolete The STP35N65M5 is a 650 V, 27 A N-channel power MOSFET from STMicroelectronics' MDmesh™ V series, built with a vertical structure that reduces on-resistance per unit area. It comes in a TO-220 through-hole package and is rated for junction temperatures up to 150°C. These numbers define the conduction and switching loss budget for a 650 V-class offline converter or PFC stage. The part is now listed as obsolete by the manufacturer. For new designs, a replacement should be evaluated; for existing BOM lines, sourcing moves to the surplus and broker channel. At 27 A continuous drain current, the conduction loss at max Rds(on) reaches 71 W, which must be within the 160 W power dissipation rating and the thermal capability of the heatsink. Gate charge of 83 nC at 10 V is moderate for a 650 V device of this current class. The driver must supply this charge per switching cycle; at 100 kHz switching frequency, the gate drive power is roughly 83 nC × 10 V × 100 kHz = 83 mW, plus driver losses.","metaTitle":"STP35N65M5 N-Channel MOSFET, 650V, 27A, TO-220","metaDescription":"STP35N65M5 N-Channel MOSFET, 650V Vdss, 27A Id, 98mOhm Rds(on) at 10V. Obsolete.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™ V","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"5V @ 250µA","Base Product Number":"STP35N","Operating Temperature":"150°C (TJ)","Rds On (Max) @ Id, Vgs":"98mOhm @ 13.5A, 10V","Power Dissipation (Max)":"160W (Tc)","Supplier Device Package":"TO-220","Gate Charge (Qg) (Max) @ Vgs":"83 nC @ 10 V","Drain to Source Voltage (Vdss)":"650 V","Input Capacitance (Ciss) (Max) @ Vds":"3750 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"27A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$5.6700","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/fbf6ea96c2d7922565d737809598e671.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the replacement for STP35N65M5?","answer":"For an existing BOM, evaluate a pin-compatible 650 V N-channel MOSFET from ST's current MDmesh series or a competitor's equivalent, checking Rds(on), gate charge, and package compatibility."},{"question":"What are the specifications of STP35N65M5?","answer":"Package is TO-220-3 through-hole."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STP35N65M5","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STP35N65M5 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}