{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STP35N65DM2","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STP35N65DM2","canonicalUrl":"https://icboms.com/stmicroelectronics/STP35N65DM2","factsUrl":"https://icboms.com/api/mcp/products/STP35N65DM2","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STP35N65DM2, MDmesh™ DM2 series, N-Channel MOSFET, 650 V Vdss, 32 A continuous drain, 110 mOhm Rds(on) at 16 A, 10 V drive, 56.3 nC gate charge, TO-220-3 through-hole package, -55°C to 150°C junction temperature.","salesMarkdown":"## 650 V N-channel MOSFET for power conversion The STMicroelectronics STP35N65DM2 is a 650 V N-channel power MOSFET from the MDmesh™ DM2 series, built with a metal-oxide semiconductor structure. This is the conduction loss figure for the thermal design: at 16 A, dissipation in the channel runs about 28 W before accounting for switching losses. The drive voltage for achieving minimum Rds(on) is 10 V, so a 12 V gate drive rail is typical. ## 56.3 nC gate charge and switching performance Combined with the input capacitance of 2540 pF at 100 V drain-source, this MOSFET suits hard-switched topologies up to the 100 kHz range with a moderate gate driver. The ±25 V maximum gate-source rating gives margin for ringing on long gate traces. This makes the part suitable for motor-drive cabinets, outdoor telecom rectifiers, and PFC stages where ambient heat and self-heating push junction temperatures above 125°C.","metaTitle":"STP35N65DM2 N-Channel MOSFET, 650 V, 32 A, TO-220-3","metaDescription":"STMicroelectronics STP35N65DM2 N-channel MOSFET, 650 V Vdss, 32 A continuous drain, 110 mOhm Rds(on) at 10 V. Active lifecycle.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™ DM2","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"5V @ 250µA","Base Product Number":"STP35","Operating Temperature":"-55°C~150°C(TJ)","Rds On (Max) @ Id, Vgs":"110mOhm @ 16A, 10V","Power Dissipation (Max)":"250W (Tc)","Supplier Device Package":"TO-220","Gate Charge (Qg) (Max) @ Vgs":"56.3 nC @ 10 V","Drain to Source Voltage (Vdss)":"650 V","Input Capacitance (Ciss) (Max) @ Vds":"2540 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"32A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$4.1102","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/59af061b4ad88fe5d1613c8686254510.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the closest pin-compatible alternative to STP35N65DM2 in this component family?","answer":"Within the MDmesh™ DM2 series, pin-compatible alternatives are available at different current and Rds(on) levels. The STP35N65DM2 itself is the 32 A, 110 mOhm variant in TO-220. A direct drop-in would share the same TO-220-3 footprint and gate-drive voltage requirements. For a specific parametric match, compare the 650 V rating and Rds(on) at 10 V against other MDmesh™ DM2 TO-220 parts."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STP35N65DM2","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STP35N65DM2 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}