{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STP34NM60ND","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STP34NM60ND","canonicalUrl":"https://icboms.com/stmicroelectronics/STP34NM60ND","factsUrl":"https://icboms.com/api/mcp/products/STP34NM60ND","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics FDmesh™ II N-channel MOSFET, 600V Vdss, 29A Id, 110mOhm Rds(on) at 10V, 80.4nC Qg, TO-220-3, through-hole, active, ROHS3 compliant.","salesMarkdown":"## Gate charge and input capacitance — what the driver sees The STP34NM60ND: Total gate charge is 80.4 nC at 10 V, and input capacitance is 2785 pF at 50 V drain bias. ## Package and mounting — TO-220 through-hole Supplied in a TO-220-3 through-hole package, the STP34NM60ND mounts into a standard footprint. The metal tab is the drain terminal; the thermal pad area on the heatsink sets the junction-to-case thermal resistance.","metaTitle":"STP34NM60ND N-Channel MOSFET, 600V 29A TO-220","metaDescription":"STP34NM60ND FDmesh™ II N-channel MOSFET, 600V Vdss, 29A Id, 110mOhm Rds(on) at 10V. Active production, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"FDmesh™ II","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"FDmesh™ II","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"5V @ 250µA","Base Product Number":"STP34","Operating Temperature":"150°C(TJ)","Rds On (Max) @ Id, Vgs":"110mOhm @ 14.5A, 10V","Power Dissipation (Max)":"190W (Tc)","Supplier Device Package":"TO-220","Gate Charge (Qg) (Max) @ Vgs":"80.4 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"2785 pF @ 50 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"29A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$10.9000","priceTiers":[{"qty":1,"price":"$10.90000","currency":"USD"},{"qty":10,"price":"$9.33900","currency":"USD"},{"qty":100,"price":"$7.78260","currency":"USD"},{"qty":500,"price":"$6.86704","currency":"USD"},{"qty":1000,"price":"$6.18034","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/3eb771b343d3dbc9bcff02c812ba33ba.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STP34NM60ND/alternatives.json"},"ai":{"faq":[{"question":"What is the closest pin-compatible alternative to STP34NM60ND?","answer":"No official pin-compatible second source or direct replacement is listed in the component family record. The FDmesh™ II series includes other 600 V N-channel devices in TO-220, but each has a different Rds(on) and current rating — confirm the parametric match against the BOM before substituting."},{"question":"What are typical applications for the STP34NM60ND?","answer":"As a 600 V, 29 A N-channel MOSFET in a TO-220 package, it is suited for switched-mode power supplies, power-factor-correction stages, lighting ballasts, and motor-drive inverter stages where the 110 mOhm Rds(on) and 80.4 nC gate charge fit the switching frequency and thermal budget."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STP34NM60ND","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STP34NM60ND when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}