{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STP34N65M5","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STP34N65M5","canonicalUrl":"https://icboms.com/stmicroelectronics/STP34N65M5","factsUrl":"https://icboms.com/api/mcp/products/STP34N65M5","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STP34N65M5 MDmesh™ V N-channel MOSFET, 650 V, 28 A, 110 mOhm, TO-220-3, through-hole, tube.","salesMarkdown":"## 650 V, 28 A N-channel in TO-220 The STP34N65M5 is an N-channel power MOSFET from STMicroelectronics' MDmesh™ V series, built on the company's fifth-generation high-voltage trench technology. It delivers 650 V drain-source breakdown voltage and 28 A continuous drain current at 25 °C case temperature, with a maximum on-resistance of 110 mOhm at 14 A and 10 V gate drive. Housed in a standard TO-220-3 through-hole package, this part is a direct fit for power supplies, PFC stages, and inverter bridges where the designer needs a proven, heatsink-friendly footprint. The 190 W power dissipation ceiling at the case gives the thermal engineer room to size the heatsink for continuous operation at full load. ## Gate charge and switching losses Total gate charge (Qg) is 62.5 nC at Vgs = 10 V, and input capacitance (Ciss) is 2700 pF at Vds = 100 V. These numbers set the gate-driver current requirement: a driver sourcing 1 A charges the gate in roughly 63 ns, but the Miller plateau region adds to the switching transition time. At a 100 kHz switching frequency, the gate-drive loss alone is about 6.25 mW per device — negligible, but the crossover loss during the Miller plateau will dominate unless the driver has enough peak current to push through it quickly. The 5 V maximum threshold voltage at 250 µA drain current means the device is fully enhanced with a standard 10 V gate drive, but the threshold window (not specified here) should be checked against the driver's output voltage sag under load. A 12 V rail with a 10% droop still clears the 5 V max threshold, so no issue in typical 12 V gate-drive circuits.","metaTitle":"STP34N65M5 STMicro N-Ch MOSFET, 650V 28A TO-220","metaDescription":"STP34N65M5 N-channel MOSFET, 650V 28A, 110mOhm Rds(on), TO-220. MDmesh V series. Active, ROHS3. Quoted to order against RFQ.","metaKeywords":null},"attributes":{"series":"MDmesh™ V","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™ V","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"5V @ 250µA","Base Product Number":"STP34","Operating Temperature":"150°C (TJ)","Rds On (Max) @ Id, Vgs":"110mOhm @ 14A, 10V","Power Dissipation (Max)":"190W (Tc)","Supplier Device Package":"TO-220","Gate Charge (Qg) (Max) @ Vgs":"62.5 nC @ 10 V","Drain to Source Voltage (Vdss)":"650 V","Input Capacitance (Ciss) (Max) @ Vds":"2700 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"28A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$6.2200","priceTiers":[{"qty":1,"price":"$6.22000","currency":"USD"},{"qty":10,"price":"$5.22100","currency":"USD"},{"qty":100,"price":"$4.22360","currency":"USD"},{"qty":500,"price":"$3.75430","currency":"USD"},{"qty":1000,"price":"$3.21461","currency":"USD"},{"qty":2000,"price":"$3.02690","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/cd6d89fdb53478581a4a8d18a186838e.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STP34N65M5/alternatives.json"},"ai":{"faq":[{"question":"What is the closest functional second-source for STP34N65M5?","answer":"The STP34NM60N (MDmesh™ II, 600 V, 29 A, 105 mOhm) is a close functional peer in the same TO-220 package. It drops into the same footprint and gate-drive circuit, but the 50 V lower drain-source rating means it cannot be used on 650 V rails. For 650 V applications, the STP30N65M5 (same MDmesh V series, 22 A, 139 mOhm) is a parametric alternative with a slightly higher Rds(on)."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STP34N65M5","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STP34N65M5 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}