{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STP33N65M2","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STP33N65M2","canonicalUrl":"https://icboms.com/stmicroelectronics/STP33N65M2","factsUrl":"https://icboms.com/api/mcp/products/STP33N65M2","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics MDmesh™ M2 series, STP33N65M2, N-Channel MOSFET, 650V Vdss, 24A Id, 140mOhm Rds(on), 41.5nC Qg, TO-220-3 through-hole package, 150°C junction temperature.","salesMarkdown":"## 650 V, 24 A, 140 mOhm — the switching-loss vs conduction-loss trade-off The 41.5 nC total gate charge at 10 V means a 100 kHz switching frequency demands roughly 4.15 mA average from the gate driver, which a standard driver handles without issue. ## Gate charge and input capacitance — driver loading ## Thermal management and package The TO-220-3 through-hole package allows a direct metal-tab connection to a heatsink. The part is ROHS3 compliant. For dual-sourcing, a parametric search for 650 V, 24 A, N-channel TO-220 MOSFETs with similar Rds(on) and gate charge is the practical route.","metaTitle":"STP33N65M2 MOSFET N-Ch 650V 24A TO-220 – MDmesh M2","metaDescription":"STP33N65M2 N-channel 650V 24A MOSFET, 140mOhm Rds(on), 41.5nC gate charge. Active production, TO-220-3.","metaKeywords":null},"attributes":{"series":"MDmesh™ M2","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™ M2","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Base Product Number":"STP33","Operating Temperature":"150°C (TJ)","Rds On (Max) @ Id, Vgs":"140mOhm @ 12A, 10V","Power Dissipation (Max)":"190W (Tc)","Supplier Device Package":"TO-220","Gate Charge (Qg) (Max) @ Vgs":"41.5 nC @ 10 V","Drain to Source Voltage (Vdss)":"650 V","Input Capacitance (Ciss) (Max) @ Vds":"1790 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"24A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$3.9700","priceTiers":[{"qty":1,"price":"$3.97000","currency":"USD"},{"qty":10,"price":"$3.33100","currency":"USD"},{"qty":100,"price":"$2.69480","currency":"USD"},{"qty":500,"price":"$2.39540","currency":"USD"},{"qty":1000,"price":"$2.05106","currency":"USD"},{"qty":2000,"price":"$1.93129","currency":"USD"},{"qty":5000,"price":"$1.85288","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/902b0661dffa929754516d2e2a232c24.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STP33N65M2/alternatives.json"},"ai":{"faq":[{"question":"How does STP33N65M2 compare to STP33N65M5?","answer":"The STP33N65M5 is an earlier MDmesh generation with typically lower Rds(on) but higher gate charge. The M2 variant offers a balance of conduction and switching losses suited for hard-switching topologies like PFC and LLC converters. The M5 part may be preferred for very low-frequency switching where conduction loss dominates, while the M2 is better for higher-frequency designs where switching losses matter more."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STP33N65M2","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STP33N65M2 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}