{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STP33N60M6","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STP33N60M6","canonicalUrl":"https://icboms.com/stmicroelectronics/STP33N60M6","factsUrl":"https://icboms.com/api/mcp/products/STP33N60M6","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STP33N60M6, MDmesh™ M6 N-Channel MOSFET, 600 V Vdss, 125 mOhm Rds(on) @ 12.5 A, 10 V, 25 A continuous drain, 33.4 nC gate charge, TO-220-3 through-hole, -55°C to 150°C junction.","salesMarkdown":"## 600 V N-channel in the MDmesh M6 family The STP33N60M6 is a 600 V N-channel power MOSFET from STMicroelectronics' MDmesh™ M6 series, built on a multi-drain mesh vertical process that balances on-resistance and switching speed for high-voltage power conversion. The input capacitance is 1515 pF at 100 V drain-source — the Miller plateau region is narrow enough that a standard gate-drive IC with a few ohms of external gate resistance can hit the target switching speed without excessive ringing. ## On-resistance and conduction loss at the operating point At that current the conduction loss sits around 12.5 W, well within the 190 W package dissipation limit when the device is bolted to a proper heatsink. The TO-220-3 package with a metal tab is the standard through-hole format for heatsink mounting. The tab is the drain terminal, so the heatsink pad must be electrically isolated or the entire assembly floats. The 190 W dissipation rating assumes the case is held at 25°C — in a real 85°C ambient, the usable power drops to about 80 W before the junction hits 150°C, so the thermal resistance of the interface pad and heatsink area is the real limiter.","metaTitle":"STP33N60M6 N-Channel MOSFET, 600 V, 125 mOhm, TO-220","metaDescription":"STP33N60M6 N-Channel MOSFET, 600 V Vdss, 125 mOhm Rds(on) at 10 V, 25 A continuous drain, TO-220-3. Active lifecycle.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™ M6","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4.75V @ 250µA","Base Product Number":"STP33","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"125mOhm @ 12.5A, 10V","Power Dissipation (Max)":"190W (Tc)","Supplier Device Package":"TO-220","Gate Charge (Qg) (Max) @ Vgs":"33.4 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"1515 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"25A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$4.7600","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/1c111a6cff6799b61e238fe9e8025e61.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the replacement for STP33N60M6?","answer":"No official replacement or successor is listed for the STP33N60M6. Since the part is active, a direct replacement is not needed — the same order code can be sourced. For a second-source alternative, look at other 600 V, 125 mOhm class N-channel MOSFETs in TO-220 from Infineon or onsemi, but pin compatibility and gate-drive thresholds must be verified against the specific application."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STP33N60M6","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STP33N60M6 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}