{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STP33N60M2","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STP33N60M2","canonicalUrl":"https://icboms.com/stmicroelectronics/STP33N60M2","factsUrl":"https://icboms.com/api/mcp/products/STP33N60M2","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STP33N60M2, MDmesh™ II Plus, N-Channel MOSFET, 600V Vdss, 26A Id, 125mOhm Rds(on) at 10V, 45.5nC Qg, TO-220-3, -55°C to 150°C TJ.","salesMarkdown":"## 600 V N-channel in a TO-220 — the power-switch baseline The STP33N60M2 is an STMicroelectronics N-channel power MOSFET from the MDmesh™ II Plus series, built on a planar stripe technology that balances on-resistance and switching losses. The gate charge of 45.5 nC at 10 V keeps the driver power manageable for switching frequencies up to the 100 kHz range. This is the conduction loss anchor: at 26 A the I²R loss would be 84.5 W if the on-resistance held flat, but the actual junction temperature rise will increase Rds(on) by roughly 50% at 125°C, so budget the thermal resistance of the heatsink accordingly. The 45.5 nC total gate charge at Vgs=10 V translates to a gate-drive power of Pgate = Qg × Vgs × fsw. At 100 kHz switching, that is 45.5 nC × 10 V × 100 kHz = 45.5 mW — well within a standard gate-driver IC's capability. The input capacitance Ciss of 1781 pF at Vds=100 V sets the Miller plateau duration and the driver's peak current requirement for a given rise time.","metaTitle":"STP33N60M2 MOSFET N-CH 600V 26A TO-220, MDmesh II Plus","metaDescription":"STP33N60M2 N-channel MOSFET, 600V Vdss, 26A continuous drain, 125mOhm Rds(on) at 10V. Active production, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"MDmesh™ II Plus","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™ II Plus","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Base Product Number":"STP33","Operating Temperature":"-55°C~150°C(TJ)","Rds On (Max) @ Id, Vgs":"125mOhm @ 13A, 10V","Power Dissipation (Max)":"190W (Tc)","Supplier Device Package":"TO-220","Gate Charge (Qg) (Max) @ Vgs":"45.5 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"1781 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"26A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$4.7000","priceTiers":[{"qty":1,"price":"$4.70000","currency":"USD"},{"qty":10,"price":"$3.94300","currency":"USD"},{"qty":100,"price":"$3.18970","currency":"USD"},{"qty":500,"price":"$2.83528","currency":"USD"},{"qty":1000,"price":"$2.42770","currency":"USD"},{"qty":2000,"price":"$2.28594","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/35dce69e2420954630a0e97df8ebf92e.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STP33N60M2/alternatives.json"},"ai":{"faq":[{"question":"Does STP33N60M2 have a complementary P-channel MOSFET for half-bridge designs?","answer":"The evidence does not list a complementary P-channel device from the same series. For half-bridge topologies, a separate P-channel MOSFET with matching voltage and current ratings would need to be selected independently."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STP33N60M2","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STP33N60M2 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}