{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STP33N60DM6","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STP33N60DM6","canonicalUrl":"https://icboms.com/stmicroelectronics/STP33N60DM6","factsUrl":"https://icboms.com/api/mcp/products/STP33N60DM6","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics MDmesh M6 N-channel MOSFET, STP33N60DM6, 600 V Vdss, 128 mOhm Rds(on) at 10 V, 25 A continuous drain, TO-220-3 through-hole package, -55 to 150 °C junction range.","salesMarkdown":"The 35 nC figure keeps the gate-drive power modest — a typical 10 V driver delivering 1 A peak can charge the gate in about 35 ns. The low Qg relative to the Rds(on) gives a competitive figure of merit for hard-switched topologies like PFC and flyback converters. The exposed metal tab is the drain connection — the mounting hole and tab surface must be electrically isolated or connected to the drain node. ## Temperature range and derating The ±25 V maximum gate-source rating gives headroom for gate-drive overshoot in switched-mode supplies.","metaTitle":"STP33N60DM6 MOSFET, N-Channel 600 V, 128 mOhm, TO-220-3","metaDescription":"STP33N60DM6 N-channel 600 V MOSFET, 128 mOhm Rds(on) at 10 V, 25 A continuous drain, TO-220-3 package. Active production.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™ M6","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4.75V @ 250µA","Base Product Number":"STP33","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"128mOhm @ 12.5A, 10V","Power Dissipation (Max)":"190W (Tc)","Supplier Device Package":"TO-220","Gate Charge (Qg) (Max) @ Vgs":"35 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"1500 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"25A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$5.1900","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/68d683ca14e452efdec0b16400c4432b.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STP33N60DM6/alternatives.json"},"ai":{"faq":[{"question":"What is the exact Rds(on) of STP33N60DM6 at 10V?","answer":"This value is specified at 25 °C junction temperature; at 125 °C the Rds(on) typically increases to about 240-250 mOhm."},{"question":"Does STP33N60DM6 require a heatsink?","answer":"At 25 A continuous drain current the power dissipation can exceed 190 W at the case, so a heatsink is required for any sustained operation. The TO-220 package tab must be mounted to a heatsink with adequate thermal interface material to keep the junction temperature within the -55 °C to 150 °C range."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STP33N60DM6","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STP33N60DM6 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}