{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STP33N60DM2","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STP33N60DM2","canonicalUrl":"https://icboms.com/stmicroelectronics/STP33N60DM2","factsUrl":"https://icboms.com/api/mcp/products/STP33N60DM2","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics MDmesh™ DM2 series, STP33N60DM2, N-Channel MOSFET, 600V Vdss, 24A Id, 130mOhm Rds(on) at 10V, 43nC Qg, TO-220-3 through-hole, -55°C to 150°C junction temperature.","salesMarkdown":"## 130 mOhm on-resistance — the conduction loss number That 10 V drive voltage is the recommended level for minimum Rds(on); at lower gate voltages the resistance climbs, so the gate supply rail needs to deliver a clean 10 V for the MOSFET to hit its rated efficiency. ## Through-hole TO-220 — mounting and thermal path Maximum power dissipation is 190 W at case temperature, but that figure assumes the tab is bolted to an infinite heatsink — real-world dissipation depends on the thermal interface and airflow. The tab is electrically connected to the drain, so an insulating pad or thermal compound is needed if the heatsink is grounded. The base product number STP33 covers a family of voltage and current variants sharing the same footprint, which helps with second-sourcing within the same series.","metaTitle":"STP33N60DM2 MOSFET, N-Channel 600V, 24A, TO-220","metaDescription":"STP33N60DM2 N-channel 600V MOSFET, 24A continuous drain, 130mOhm Rds(on) at 10V. MDmesh DM2 series, TO-220-3, -55°C to 150°C.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™ DM2","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"5V @ 250µA","Base Product Number":"STP33","Operating Temperature":"-55°C~150°C(TJ)","Rds On (Max) @ Id, Vgs":"130mOhm @ 12A, 10V","Power Dissipation (Max)":"190W (Tc)","Supplier Device Package":"TO-220","Gate Charge (Qg) (Max) @ Vgs":"43 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"1870 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"24A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$5.2600","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/c161eda2c8273fbc0234fe47cbabe689.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) of STP33N60DM2?","answer":"This is the value to use for worst-case conduction loss calculations in the power stage."},{"question":"Is STP33N60DM2 RoHS compliant?","answer":"The STP33N60DM2 is listed as a current-production part from STMicroelectronics, and ST's MDmesh DM2 series devices are typically RoHS compliant. Verify the specific date code and lot against the manufacturer's RoHS certificate for your procurement records."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STP33N60DM2","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STP33N60DM2 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}